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Nahyun Kim

Researcher at Samsung

Publications -  8
Citations -  284

Nahyun Kim is an academic researcher from Samsung. The author has contributed to research in topics: NAND gate & Analytical Chemistry (journal). The author has an hindex of 6, co-authored 7 publications receiving 200 citations.

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A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory

TL;DR: A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory and a novel program method hiding two-page data loading time for performance enhancement and an electrical annealing improving reliability characteristic by removing holes in shallow traps are presented.
Journal ArticleDOI

The Effects of Bath Composition on the Morphologies of Electroless Nickel Under-Bump Metallurgy on Al Input/ Output Pad

TL;DR: In this paper, the electroless nickel plating on an aluminum input/output (I/O) pad was investigated and the relationship between aluminum dissolution and the ratio of zinc and NaOH was investigated.