Showing papers by "Jiandong Ye published in 2014"
TL;DR: Alendronate (ALN)-loaded CPC was prepared and the influences of the content of ALN on the setting time, microstructure of hydrate porosity, mechanical strength, in vitro drug release, rheological properties and injectability of CPC were systematically investigated.
38 citations
TL;DR: In this article, a density functional theory simulation also indicates that ferromagnetic coupling may be enhanced by VO in n-type ZnO:(Mn, In) and ZnNO:Mn films.
20 citations
TL;DR: The enhancement of photo-response in nanometer-scale germanium photodetectors through bull's eye antennas capable of supporting 2nd-order Bloch surface plasmon modes is demonstrated in theory and experiment and the presence of surface wave and its constructive interference with the directly incident light are incorporated into the main mechanisms for enhancing transmission through the central nanoaperture.
Abstract: This work was supported by the Australian Research Council Discovery Early Career
Researcher Award (DE130101700), the National Natural Science Foundation of China (Nos
11104130, 61274058, 61322403, 60825401, and 60936004), the Basic Research Program of
Jiangsu Province (Nos BK2011556, BK2011437, and BK20130013), and the State Key
Program for Basic Research of China (Nos 2010CB327504 and 2011CB301900)
13 citations
29 Aug 2014-Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
TL;DR: In this paper, the authors used metal organic chemical vapor deposition (MOCVD) to grow Fe3O4 films on GaN templates via MOCVD and showed that the Ga diffusion from the GaN template to the Fe 3O4 layer has been controlled at a rather low level possibly due to the employed low-temperature growth, leading to a high quality FM/NM heterostructure.
Abstract: O2 and N2O, popular oxygen precursors for oxide films growth, have been employed to grow Fe3O4 films on GaN templates via metal organic chemical vapor deposition (MOCVD). A (111)-oriented Fe3O4 film was preferably deposited when N2O was used as O precursor, while a Fe2O3 film was grown with O2 as O precursor. A high-temperature annealing has caused a phase transition from α-Fe2O3 to Fe3O4 for O2 case, but no obvious change occurred on the Fe3O4 film for N2O case. Thinner Fe3O4 layer was then grown on a GaN template with N2O as O precursor to form ferromagnetic material (FM)/nonmagnetic material (NM) heterostructure, which is critical for the realization of spin injection in GaN based wide band gap semiconductors. The Ga diffusion from the GaN template to the Fe3O4 layer has been controlled at a rather low level possibly due to the employed low-temperature growth, leading to a high-quality FM/NM heterostructure. An obvious enhancement on the Ga diffusion has been observed upon subsequent annealing for the thin Fe3O4 layer, which dispersed the FM/NM interface, improved the crystal quality, but weakened the magnetic properties. This study indicates that MOCVD is a suitable method to grow high-quality Fe3O4 films on GaN and should be a powerful tool for the realization of GaN based spin light-emitting diode.
11 citations
TL;DR: FE modeling was the ideal method for predicting fracture behavior of bone–CPC specimen both qualitatively and quantitatively, and the optimal stress matching between bone and CPC was achieved.
6 citations
TL;DR: In this paper, the amorphous calcium phosphate with silver substitution (Ag-ACP) was synthesized by chemical precipitation method, and the valence of silver in ACP was adjusted by temperature.
4 citations
11 Nov 2014-Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Abstract: In this paper, the authors report the growth of diluted oxygen doped ZnTe films (ZnTe:O) by metal-organic chemical vapor deposition (MOCVD). The effect of a post thermal annealing on the properties of the highly mismatched films has been investigated. It is found that the in-situ doping leads to an effective incorporation of oxygen into ZnTe films with different occupation configurations, either on Zn or on Te site. The subsequent annealing process in a vacuum ambient leads to an enhancement of the oxygen incorporation into the ZnTe:O films due to the diffusion of the residual oxygen, while the annealing with the same as-grown sample covered on top of the surface (denoted as “face-to-face” annealing in the text) is beneficial to the improvement of the film quality with manifest intermediate band emission at around 1.9 eV as revealed by the low-temperature photoluminescence. This study indicates that the mass-productive MOCVD technique may be suitable for the growth of highly mismatched ZnTe:O films for the application of the intermediate band solar cell.
4 citations
4 citations
TL;DR: In this paper, the effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0, 0, 0) films have been investigated in detail.
4 citations
TL;DR: In this paper, the magnetic properties of (Mn, N)-codoped ZnO, with various interstitial structures of H, have been investigated, and the strong hybridization between H-impurity band and the Mn 3d minority spin states at the Fermi level results in the FM coupling between the spins of Mn and N, which is similar with the spin split donor impurity band model.
Abstract: By first-principles, we study the magnetic properties of (Mn, N)-codoped ZnO, with various interstitial structures of H. Besides, hydrogen motion in ZnMnON has been investigated too. Results show that a mobile H in (Mn, N)-codoped ZnO may be favorably formed a stable –Mn–H–N– complex, and that the ferromagnetism strongly depends on the geometrical configurations of these impurities. The strong hybridization between H-impurity band and the Mn 3d minority spin states at the Fermi level results in the FM coupling between the spins of Mn and N, which is similar with the spin–split donor impurity band model.
2 citations
10 Feb 2014
TL;DR: In this paper, the micro structural and optical properties of ZnTe:O materials have been investigated in detail and the results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states.
Abstract: ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.