J
Jiang Li
Researcher at The Furukawa Electric Co., Ltd.
Publications - 48
Citations - 446
Jiang Li is an academic researcher from The Furukawa Electric Co., Ltd.. The author has contributed to research in topics: Breakdown voltage & Field-effect transistor. The author has an hindex of 12, co-authored 42 publications receiving 424 citations.
Papers
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Journal ArticleDOI
A high-power AlGaN/GaN heterojunction field-effect transistor
TL;DR: In this article, an AlGaN/GaN heterojunction field effect transistor (HFET) with a very low on-state resistance was fabricated on a sapphire substrate using gas-source molecular beam epitaxy.
Patent
GaN SEMICONDUCTOR DEVICE
TL;DR: In this article, a GaN semiconductor device is provided with a III-V nitride semiconductor layer containing at least one hetero junction structure of different band gap energies, and an insulating protecting film is brought into contact with the second anode.
Proceedings ArticleDOI
High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates
TL;DR: In this article, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated and the device characteristics were examined, and a tradeoff between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA = 5.9 mΩcm2 and Vb = 1730 V simultaneously with the gate width of a 340 mm.
Journal ArticleDOI
Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application
TL;DR: In this paper, the authors developed new ohmic electrodes combined with an Al-silicide and a molybdenum for AlGaN/GaN HFETs to realize a high power switching application.
Journal ArticleDOI
Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
Yuki Niiyama,Shinya Ootomo,Jiang Li,Hiroshi Kambayashi,Takehiko Nomura,Seikoh Yoshida,Kentarou Sawano,Yasuhiro Shiraki +7 more
TL;DR: In this paper, the activation ratio of Si ion implanted un-and Mg-doped gallium nitride (GaN) for the fabrication of reduced surface field (RESURF) metaloxide-semiconductor field effect transistors (MOSFETs) was studied.