Proceedings ArticleDOI
High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates
Nariaki Ikeda,Shusuke Kaya,Jiang Li,Takuya Kokawa,Mitsuru Masuda,Sadahiro Katoh +5 more
- pp 251-254
TLDR
In this article, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated and the device characteristics were examined, and a tradeoff between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA = 5.9 mΩcm2 and Vb = 1730 V simultaneously with the gate width of a 340 mm.Abstract:
In this paper, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage was improved to be over 2.45 kV using high-resistive carbon doped buffer layers with a larger thickness of over 7.3 µm. The maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance (RonA) and the breakdown voltage (Vb) was improved using carbon doped buffer layers, resulting in obtaining RonA = 5.9 mΩcm2 and Vb = 1730 V simultaneously with the gate-width of a 340 mm. Furthermore, the field-plate structure was introduced into MIS-HFET structures. We have examined the suppression of a current collapse phenomenon owing to the combination of the gate field-plate structure and a conductive Si substrate with MIS-HFET devices.read more
Citations
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Journal ArticleDOI
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
Puneet Srivastava,J. Das,Domenica Visalli,Marleen Van Hove,Pawel E. Malinowski,Denis Marcon,Silvia Lenci,Karen Geens,Kai Cheng,Maarten Leys,Stefaan Decoutere,Robert Mertens,Gustaaf Borghs +12 more
TL;DR: In this paper, the authors present a local substrate removal technology (under the source-to-drain region) reminiscent of through-silicon vias and report on the highest ever achieved breakdown voltage (VBD) of AlGaN/GaNs/AlGaN double heterostructure FETs on a Si (111) substrate with only 2-μm-thick buffer.
Journal ArticleDOI
Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs
Wataru Saito,Yorito Kakiuchi,Tomohiro Nitta,Yasunobu Saito,Takao Noda,Hidetoshi Fujimoto,Akira Yoshioka,Tetsuya Ohno,Masakazu Yamaguchi +8 more
TL;DR: In this paper, four types of field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in highvoltage GaN-HEMTs.
Journal ArticleDOI
High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN x Passivation
TL;DR: An effective passivation technique that yields low off-state leakage and low current collapse simultaneously in highvoltage (600-V) AlGaN/GaN high-electron-mobility transistors (HEMTs) is reported in this article.
Journal ArticleDOI
High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate
Jun Ma,Elison Matioli +1 more
TL;DR: High-performance GaN power metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture are demonstrated, rendering excellent high-power figure of merits (FOMs) up to 1.25 GW/cm.
Proceedings ArticleDOI
Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
Hidekazu Umeda,Asamira Suzuki,Yoshiharu Anda,Masahiro Ishida,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +6 more
TL;DR: A novel technique to boost the blocking voltage of AlGaN/GaN hetero junction field effect transistors (HFETs) by widening a depletion layer in highly resistive Si substrate, which leads to further reduction of the fabrication cost.
References
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Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow,R. Tyagi +1 more
TL;DR: In this article, a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices is presented, and seven different figures of merit have been analyzed.
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High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
TL;DR: In this article, the current and transconductance characteristics of AlGaN/GaN modulation doped field effect transistors at elevated temperatures are studied experimentally and the drain-source current and extrinsic transconductances are both found to decrease with increasing temperature.
Proceedings ArticleDOI
High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse
TL;DR: In this article, an AlGaN HFET with a high breakdown voltage of over 1.8 kV and a maximum drain current of 120 A was demonstrated on 4-inch Si substrates.
Journal ArticleDOI
C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
TL;DR: In this article, the authors investigated GaN buffer layers grown on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system for 4-in five wafers (5 x 4") growth in order to obtain field effect transistors (FETs) with high breakdown voltages.
Proceedings ArticleDOI
8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation
Yasuhiro Uemoto,Daisuke Shibata,Manabu Yanagihara,Hidetoshi Ishida,Hisayoshi Matsuo,Shuichi Nagai,N. Batta,Ming Li,T. Ueda,Tsuyoshi Tanaka,Daisuke Ueda +10 more
TL;DR: In this article, the authors reported ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation.