J
Jianming Zhao
Researcher at University of Electronic Science and Technology of China
Publications - 7
Citations - 208
Jianming Zhao is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Diode & Light emission. The author has an hindex of 5, co-authored 6 publications receiving 163 citations.
Papers
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Journal ArticleDOI
Light emission from a poly-silicon device with carrier injection engineering
Kaikai Xu,Huang Lei,Zhang Zhengyuan,Jianming Zhao,Zhengping Zhang,Lukas W. Snyman,Jacobus W. Swart +6 more
TL;DR: In this paper, the authors discuss the emission characteristics of visible light by a monolithically integrated poly-Si diode under reverse bias and show that the dominant role of nonradiative recombination at the N+ and P+ contacts is diminished by confining the injected carriers around the PN junction's interface in which avalanche takes place.
Journal ArticleDOI
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC*
Yanxu Chen,Xu Dongliang,Kaikai Xu,Zhang Ning,Siyang Liu,Jianming Zhao,Qian Luo,Lukas W. Snyman,Jacobus W. Swart +8 more
TL;DR: In this article, a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions was presented, where the light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode.
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Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias
TL;DR: In this article, a study of a silicon metal oxide semiconductor (MOS)-type light-emitting device (LED) in which the p-n junction works under a reverse bias and the gate voltage is applied to modulate the electric field distribution from the p+ region through the n region is presented.
Journal ArticleDOI
All Silicon Microdisplay Fabricated Utilizing 0.18 μm CMOS-IC With Monolithic Integration
TL;DR: In this article , a low voltage all silicon microdisplay is presented based on MOS-like gate-control all-Silicon light-emitting diode (LED) in standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology.
Journal ArticleDOI
A dependency of emission efficiency of poly-silicon light-emitting device on avalanching current
Hongliang Sun,Kaikai Xu,Jianming Zhao,Jing Zhang,Yong Zhou,Lu Liu,Jun Yuan,Huang Lei,Kunfeng Zhu,Lukas W. Snyman,Kingsley A. Ogudo +10 more
TL;DR: In this paper, a polysilicon light emitting device (LED) was realized in a standard complementary metal oxide semiconductor (CMOS) process that is based on a p-n junction reverse bias configuration.