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Jie Zhang

Researcher at Chinese Academy of Sciences

Publications -  12
Citations -  1237

Jie Zhang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Positron & Phase transition. The author has an hindex of 4, co-authored 8 publications receiving 1013 citations. Previous affiliations of Jie Zhang include University of Science and Technology of China.

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Vacancy associates promoting solar-driven photocatalytic activity of ultrathin bismuth oxychloride nanosheets

TL;DR: High solar photocatalytic activity in ultrathin BiOCl nanosheets with almost fully exposed active {001} facets is achieved and some new and deep-seated insights are provided into how the defects in the exposed active facets affect the solar-driven photoc atalytic property are provided.
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High thermoelectric and reversible p-n-p conduction type switching integrated in dimetal chalcogenide.

TL;DR: In this article, the authors achieved the high thermoelectric performance (ZT value reaches 1.5 at 700 K) and reversible p-n-p semiconducting switching integrated in a dimetal chalcogenide, AgBiSe2 during the continuous hexagonal-rhombohedral-cubic phase transition.
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Room-temperature ferromagnetism observed in C-/N-/O-implanted MgO single crystals

TL;DR: In this article, MgO single crystals were implanted with 70 keV C/N/O ions at room temperature with respective doses of 2 x 10(16) and 2x 10(17) ions/cm(2), all samples with high-dose implantation showed room temperature hysteresis in magnetization loops.
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Defect evolution during the phase transition of hexagonal nickel sulfide studied by positron annihilation spectroscopy

TL;DR: In this article, the defect structures of hexagonal nickel sulfide with different Ni contents (Ni1−ΔS) have been investigated mainly by the positron annihilation lifetime spectroscopy and the temperature-dependent positron Doppler broadening technique.
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Controlling screw dislocation evolution towards highly homogeneous quasi-two-dimensional (BA)2(MA)n−1PbnI3n+1 single crystals for high-response photo-detectors

TL;DR: In this article , the response of planar photodetectors is enhanced by controlling the growth of a series of (BA)2(MA)n−1PbnI3n+1 SCs by macroscopic screw dislocation.