There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

An introduction to heat transfer

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.

Intrinsic ripples in graphene

Magnetocaloric effect: From materials research to refrigeration devices

The Effect of silicon window polarity on partial-SOI (partial silicon-on-insulator, PSOI) LDMOS power devices under high-voltage operation is studied. Different polarities of the silicon window in PSOI LDMOSFETs are analyzed to investigate their effects on electrical characteristics: breakdown voltage (BV) and on-resistance (Ron). In partial-SOI LDMOSFETs, the P-type silicon window is considered as a part of the substrate, while the N-type silicon window falls into the drift region, which affects the high-voltage operation of devices. The two-dimensional (2-D) simulation results show that the breakdown voltage of PSOI LDMOSFET with P-type window is higher than that of PSOI LDMOSFET with N-type window, while the on-resistance of PSOI LDMOSFET with P-type window is lower than that of PSOI LDMOSFET with N-type window.

Study on silicon window polarity of partial-SOI LDMOS power devices

A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.

A simple leakage current model for polycrystalline silicon nanowire thin-film transistors

This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces The model calculation is compared with the numerical simulations, and exact agreement between them is observed for different geometry structures

A Surface-Potential-Based Non-Charge-Sheet Core Model for Fully Depleted SOI MOSFET

A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire MOSFET

A Python computer program for calculation of distortion in the wide-band diode bridge track and hold amplifier (THA) is proposed. The computer program calculates the distortion of weekly nonlinear THA based on the KCL and the nonlinear-current method with an improved process. Simulations based on a commercially available 130 nm process technology are performed with the SpectreRF simulator. Comparative SpectreRF simulated results for the diode bridge THA have shown good agreement with those of computer program calculation, whereas the overall computational efficiency has been improved in a special evaluation.

Jin He

Papers

Study on silicon window polarity of partial-SOI LDMOS power devices

A simple leakage current model for polycrystalline silicon nanowire thin-film transistors

A Surface-Potential-Based Non-Charge-Sheet Core Model for Fully Depleted SOI MOSFET

A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire MOSFET

Distortion analysis and calculation of wide-band track and hold amplifier