Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

Semiconductor devices and methods of manufacturing the same

A method of fabricating a semiconductor device includes preparing a semiconductor wafer having a top surface and a bottom surface. The semiconductor wafer is loaded onto a wafer chuck, and the bottom surface of the loaded semiconductor wafer faces the wafer chuck. A groove is formed in the top surface of the loaded semiconductor wafer by irradiating a second laser onto the top surface, and a reforming region is formed in the loaded semiconductor wafer under the groove by irradiating a first laser through wafer chuck and bottom surface of the semiconductor wafer into a region in which the first laser is focused. The semiconductor wafer is unloaded from the wafer chuck. The bottom surface of the semiconductor wafer is ground to decrease a thickness of the semiconductor wafer. The semiconductor wafer is separated along the groove and the reforming region, thereby forming a plurality of unit chips.

Method of Fabricating Semiconductor Device

A magnetic tunneling junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, an apparatus is disclosed that includes an MTJ device. The MTJ device includes a free layer and a spin torque enhancing layer. The spin torque enhancing layer includes a nano-oxide layer.

Magnetic tunnel junction device and fabrication

As minimum feature size and pitch spacing further decrease, triple patterning lithography (TPL) is a possible 193nm extension along the paradigm of double patterning lithography (DPL). However, there is very little study on TPL layout decomposition. In this paper, we show that TPL layout decomposition is a more difficult problem than that for DPL. We then propose a general integer linear programming formulation for TPL layout decomposition which can simultaneously minimize conflict and stitch numbers. Since ILP has very poor scalability, we propose three acceleration techniques without sacrificing solution quality: independent component computation, layout graph simplification, and bridge computation. For very dense layouts, even with these speedup techniques, ILP formulation may still be too slow. Therefore, we propose a novel vector programming formulation for TPL decomposition, and solve it through effective semidefinite programming (SDP) approximation. Experimental results show that the ILP with acceleration techniques can reduce 82% runtime compared to the baseline ILP. Using SDP based algorithm, the runtime can be further reduced by 42% with some tradeoff in the stitch number (reduced by 7%) and the conflict (9% more). However, for very dense layouts, SDP based algorithm can achieve 140× speed-up even compared with accelerated ILP.

/pdf/layout-decomposition-for-triple-patterning-lithography-1bak910stu.pdf

Layout decomposition for triple patterning lithography

In double patterning lithography (DPL) layout decomposition for 45 nm and below process nodes, two features must be assigned opposite colors (corresponding to different exposures) if their spacing is less than the minimum coloring spacing [11, 9, 5]. However, there exist pattern configurations for which pattern features separated by less than the minimum color spacing cannot be assigned different colors. In such cases, DPL requires that a layout feature be split into two parts. We address this problem using a layout decomposition algorithm that includes graph construction, conflict cycle detection, and node splitting processes. We evaluate our technique on both real-world and artificially generated test cases in 45 nm technology. Experimental results show that our proposed layout decomposition method effectively decomposes given layouts to satisfy the key goals of minimized line-ends and maximized overlap margin. There are no design rule violations in the final decomposed layout.

http://www.cecs.uci.edu/~papers/iccad08/PDFs/Papers/06C.1.pdf

Layout decomposition for double patterning lithography

Double patterning lithography is very fascinating way of lithography which is capable of pushing down the k1 limit below 0.25. By using double patterning lithography, we can delineate the pattern beyond resolution capability. Target pattern is decomposed into patterns within resolution capability and decomposed patterns are combined together through twice lithography and twice etch processes. Two ways, negative and positive, of doing double patterning process are contrived and studied experimentally. In this paper, various issues in double patterning lithography such as pattern decomposition, resist process on patterned topography, process window of 1/4 pitch patterning, and overlay dependent CD variation are studied on positive and negative tone double patterning respectively. Among various issues about double patterning, only the overlay controllability and productivity seemed to be dominated as visible obstacles so far.

Positive and negative tone double patterning lithography for 50nm flash memory

A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greater contact area with a PN diode structure.

Phase-change memory device and method of fabricating the same

A method for forming a magnetic tunnel junction cell includes forming a pinning layer, a pinned layer, a dielectric layer and a free layer over a first electrode, forming a second electrode on the free layer, etching the free layer and the dielectric layer using the second electrode as an etch barrier to form a first pattern, forming a prevention layer on a sidewall of the first pattern, and etching the pinned layer and the pinning layer using the second electrode and the prevention layer as an etch barrier to form a second pattern.

Method for forming magnetic tunnel junction cell

A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist over a substrate where an etch target layer is formed, doping at least one impurity selected from group III elements and group V elements, of the periodic table, into the first photoresist, forming a photoresist pattern over the first photoresist, performing a dry etching process using the photoresist pattern to expose the first photoresist, etching the first photoresist by an oxygen-based dry etching to form a first photoresist pattern where a doped region is oxidized, and etching the etch target layer using the first photoresist pattern as an etch barrier.

Method for fabricating fine pattern in semiconductor device

The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF 3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.

Jin-Ki Jung

Papers

Positive and negative tone double patterning lithography for 50nm flash memory

Phase-change memory device and method of fabricating the same

Method for forming magnetic tunnel junction cell

Method for fabricating fine pattern in semiconductor device

Method for fabricating semiconductor device using tungsten as sacrificial hard mask