scispace - formally typeset
J

Jin Seung Kim

Researcher at Chonbuk National University

Publications -  6
Citations -  53

Jin Seung Kim is an academic researcher from Chonbuk National University. The author has contributed to research in topics: Laser ablation & Carbon film. The author has an hindex of 4, co-authored 6 publications receiving 52 citations.

Papers
More filters
Journal ArticleDOI

Surface morphology of laser deposited diamondlike films by atomic force microscopy imaging

TL;DR: The surface morphologies of diamond-like carbon (DLC) films with atomic force microscopy (AFM) were reported in this article, where the films were prepared by laser ablation with tuning power densities range from 3×108 to 1×1010 W/cm2.
Journal ArticleDOI

Electron emission characteristics of diamond like carbon films deposited by laser ablation technique

TL;DR: In this article, the surface morphology of a diamond-like carbon (DLC) film was studied by atomic force microscopy (AFM) and showed a strong dependence on the power densities of laser pulses.
Journal ArticleDOI

Field electron emission of diamondlike carbon films deposited by a laser ablation method

TL;DR: In this article, the authors investigated field electron emission properties of diamond-like carbon films deposited by a laser ablation method and found that the major carrier transport occurs not by the activation to the conduction band but by hopping between the localized defect states near the Fermi level.
Journal ArticleDOI

Properties of nitrogen-doped diamond-like-carbon films prepared by a laser ablation

TL;DR: In this paper, a diamond-like carbon film with hexamethylenetetetramine (HENET) was used to add nitrogen to the graphite surface of the diamond and shown to have a threshold field of ∼10 V/μm at optimal composition.
Proceedings ArticleDOI

Field electron emission of diamond-like-carbon films deposited by a laser ablation method

TL;DR: In this article, the authors investigated field electron emission properties of diamond-like carbon films deposited by a laser ablation method and found that the major carrier transport occurs not by activation to the conduction band but by hopping between the localized defect states near the Fermi level.