A large-scale silicon nanophotonic phased array with more than 4,000 antennas is demonstrated using a state-of-the-art complementary metal-oxide–semiconductor (CMOS) process, enabling arbitrary holograms with tunability, which brings phased arrays to many new technological territories. Nanophotonic approaches allow the construction of chip-scale arrays of optical nanoantennas capable of producing radiation patterns in the far field. This could be useful for a range of applications in communications, LADAR (laser detection and ranging) and three-dimensional holography. Until now this technology has been restricted to one-dimensional or small two-dimensional arrays. This paper reports the construction of a large-scale silicon nanophotonic phased array containing 4,096 optical nanoantennas balanced in power and aligned in phase. The array was used to generate a complex radiation pattern—the MIT logo—in the far field. The authors show that this type of nanophotonic phased array can be actively tuned, and in some cases the beam is steerable. Electromagnetic phased arrays at radio frequencies are well known and have enabled applications ranging from communications to radar, broadcasting and astronomy1. The ability to generate arbitrary radiation patterns with large-scale phased arrays has long been pursued. Although it is extremely expensive and cumbersome to deploy large-scale radiofrequency phased arrays2, optical phased arrays have a unique advantage in that the much shorter optical wavelength holds promise for large-scale integration3. However, the short optical wavelength also imposes stringent requirements on fabrication. As a consequence, although optical phased arrays have been studied with various platforms4,5,6,7,8 and recently with chip-scale nanophotonics9,10,11,12, all of the demonstrations so far are restricted to one-dimensional or small-scale two-dimensional arrays. Here we report the demonstration of a large-scale two-dimensional nanophotonic phased array (NPA), in which 64 × 64 (4,096) optical nanoantennas are densely integrated on a silicon chip within a footprint of 576 μm × 576 μm with all of the nanoantennas precisely balanced in power and aligned in phase to generate a designed, sophisticated radiation pattern in the far field. We also show that active phase tunability can be realized in the proposed NPA by demonstrating dynamic beam steering and shaping with an 8 × 8 array. This work demonstrates that a robust design, together with state-of-the-art complementary metal-oxide–semiconductor technology, allows large-scale NPAs to be implemented on compact and inexpensive nanophotonic chips. In turn, this enables arbitrary radiation pattern generation using NPAs and therefore extends the functionalities of phased arrays beyond conventional beam focusing and steering, opening up possibilities for large-scale deployment in applications such as communication, laser detection and ranging, three-dimensional holography and biomedical sciences, to name just a few.

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Large-scale nanophotonic phased array

An on-chip integrated wavelength demultiplexer designed using an inverse computational algorithm is experimentally demonstrated. 1,300 and 1,550 nm wavelength light is sorted in a device area of just 2.8 × 2.8 μm2.

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Inverse design and demonstration of a compact and broadband on-chip wavelength demultiplexer

Microwave photonics (MWP) is an emerging field in which radio frequency (RF) signals are generated, distributed, processed and analyzed using the strength of photonic techniques. It is a technology that enables various functionalities which are not feasible to achieve only in the microwave domain. A particular aspect that recently gains significant interests is the use of photonic integrated circuit (PIC) technology in the MWP field for enhanced functionalities and robustness as well as the reduction of size, weight, cost and power consumption. This article reviews the recent advances in this emerging field which is dubbed as integrated microwave photonics. Key integrated MWP technologies are reviewed and the prospective of the field is discussed.

Integrated microwave photonics

Light detection and ranging is widely used in science and industry. Over the past decade, optical frequency combs were shown to offer advantages in optical ranging, enabling fast distance acquisition with high accuracy. Driven by emerging high-volume applications such as industrial sensing, drone navigation, or autonomous driving, there is now a growing demand for compact ranging systems. Here, we show that soliton Kerr comb generation in integrated silicon nitride microresonators provides a route to high-performance chip-scale ranging systems. We demonstrate dual-comb distance measurements with Allan deviations down to 12 nanometers at averaging times of 13 microseconds along with ultrafast ranging at acquisition rates of 100 megahertz, allowing for in-flight sampling of gun projectiles moving at 150 meters per second. Combining integrated soliton-comb ranging systems with chip-scale nanophotonic phased arrays could enable compact ultrafast ranging systems for emerging mass applications.

Ultrafast optical ranging using microresonator soliton frequency combs

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using “neural compiler” to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

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Neuromorphic photonic networks using silicon photonic weight banks.

Stable mode-hop-free operation for a Si/III-V hybrid external-cavity laser was demonstrated during 320mA bias current sweep using a real-time ring monitoring, a fast feedback control loop, and a simple bang-bang control algorithm, by both tunable micro-ring filter and cavity phase section.

Si/III-V hybrid external-cavity laser stabilization using real-time micro-ring monitoring and feedback control

We report on how external cavity III-V/SiN hybrid lasers operate in regimes of ultra-damped relaxation oscillations or in CW unstable dynamical regimes (self-pulsing or approaching turbulence) as a consequence of mirror dispersion, non-zero linewidth enhancement factor, and four-wave mixing in the gain medium. The impact of the dispersive mirror bandwidth and different mirror effective lengths on the laser tolerance to external optical feedback is also discussed.

CW Emission and Self-Pulsing in a III-V/SiN Hybrid Laser With Narrow Band Mirror

A laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector. The RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. A negative thermo-optic coefficient (NTOC) waveguide is fabricated on top of the SSC. In this way, an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide. During operation, the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser. Finally, a laser output is optically coupled to the lasing cavity.

Thermally compensating spot-size converter for an athermal laser

An optical source may include an optical gain chip that provides an optical signal and that is optically coupled to an SOI chip. The optical gain chip may include a reflective layer. Moreover, the SOI chip may include: a first optical waveguide, a first ring resonator that selectively optically coupled to a second optical waveguide and that performs phase modulation and filtering of the optical signal, the second optical waveguide, an amplitude modulator, and an output port. Note that the reflective layer in the optical gain chip and the amplitude modulator may define an optical cavity. Furthermore, a resonance of the first ring resonator may be aligned with a lasing wavelength, and the resonance of the first ring resonator and a resonance of the amplitude modulator may be offset from each other. Additionally, modulation of the first ring resonator and the amplitude modulator may be in-phase with each other.

Single-pass ring-modulated laser

An integrated circuit includes optical waveguides defined in a semiconductor layer, and uses removable optical taps to allow for in-process characterization and trimming These optical waveguides may be trimmed during fabrication of the integrated circuit to improve performance Note that the trimming may modify indexes of refraction of portions of the optical waveguides or may involve a more invasive process Moreover, the trimming may exclude or may not involve the use of a polymer and/or the carrier wavelengths at a given temperature may be stable as a function of time The trimming process may use removable optical taps for external feedback to determine the amount of change required These optical taps may be formed either in the semiconductor layer or the cladding layer, and they may be disabled with negligible impact to device performance via alterations to the cladding layer after the completion of trimming

Jock Bovington

Papers

Si/III-V hybrid external-cavity laser stabilization using real-time micro-ring monitoring and feedback control

CW Emission and Self-Pulsing in a III-V/SiN Hybrid Laser With Narrow Band Mirror

Thermally compensating spot-size converter for an athermal laser

Single-pass ring-modulated laser

Removable optical tap for in-process characterization