Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

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A roadmap for graphene

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

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Silicon optical modulators

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

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Silicon microring resonators

We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.

Device Requirements for Optical Interconnects to Silicon Chips

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

We present a computing microsystem that uniquely leverages the bandwidth, density, and latency advantages of silicon photonic interconnect to enable highly compact supercomputer-scale systems. We describe and justify single-node and multinode systems interconnected with wavelength-routed optical links, quantify their benefits vis-a-vis electrically connected systems, analyze the constituent optical component and system requirements, and provide an overview of the critical technologies needed to fulfill this system vision. This vision calls for more than a hundredfold reduction in energy to communicate an optical bit of information. We explore the power dissipation of a photonic link, suggest a roadmap to lower the energy-per-bit of silicon photonic interconnects, and identify the challenges that will be faced by device and circuit designers towards this goal.

Computer Systems Based on Silicon Photonic Interconnects

We present a high-speed silicon optical modulator with a low Vpp (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a Vpp of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of ~1000 µm2.

Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator

We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130nm SOI CMOS process, with 7.5μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25Gb/s modulation and an extinction ratio >5dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7fJ/bit. The whole device fits in a compact 400μm2 footprint.

25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning

We present thermally reconfigurable multiplexing devices based on silicon microring resonators with low tuning power and low thermal crosstalk. Micro-heaters on top of the rings are employed to tune the resonant wavelengths through the thermo-optic effect of silicon. We achieve a low tuning power of 21 mW per free spectral range for a single ring by exploiting thermal isolation trenches close to the ring waveguides. Negligible thermal crosstalk is demonstrated for rings spaced by 15 µm, enabling compact multiplexing devices. The tuning time constant is demonstrated to be less than 10 µs.

Low power and compact reconfigurable multiplexing devices based on silicon microring resonators

We present a wavelength-tunable, compact, high speed and low power silicon microring modulator. With a ring radius of 5 microm, we demonstrate a modulator with a high speed of 12.5 Gbps and a driving voltage of 3 V to achieve approximately 6 dB extinction ratio in high speed measurement. More importantly, tunability of the resonant wavelength is accomplished by means of a microheater on top of the ring, with an efficiency of 2.4 mW/nm (2.4 mW is needed to tune the resonant wavelength by 1 nm). This device aims to solve the narrow bandwidth problem of silicon microcavity modulators and increase the data bandwidth in optical interconnect systems.

Xuezhe Zheng

Papers

Computer Systems Based on Silicon Photonic Interconnects

Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator

25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning

Low power and compact reconfigurable multiplexing devices based on silicon microring resonators

Wavelength-tunable silicon microring modulator.