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Art of electronics

Photovoltaics based on nanowire arrays could reduce cost and materials consumption compared with planar devices but have exhibited low efficiency of light absorption and carrier collection. We fabricated a variety of millimeter-sized arrays of p-type/intrinsic/n-type (p-i-n) doped InP nanowires and found that the nanowire diameter and the length of the top n-segment were critical for cell performance. Efficiencies up to 13.8% (comparable to the record planar InP cell) were achieved by using resonant light trapping in 180-nanometer-diameter nanowires that only covered 12% of the surface. The share of sunlight converted into photocurrent (71%) was six times the limit in a simple ray optics description. Furthermore, the highest open-circuit voltage of 0.906 volt exceeds that of its planar counterpart, despite about 30 times higher surface-to-volume ratio of the nanowire cell.

https://science.sciencemag.org/content/sci/339/6123/1057.full.pdf

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Considerable efforts have been devoted to enhancing the photocatalytic activity and solar energy utilization of photocatalysts. The fabrication of type II heterostructures plays an important role in photocatalysts modification and has been extensively studied. In this review, we briefly trace the application of type II heterostructured semiconductors in the area of environmental remediation and water splitting, summarize major fabrication methods, describe some of the progress and resulting achievements, and discuss the future prospects. The scope of this review covers a variety of type II heterostructures, focusing particularly on TiO2 and ZnO based visible light driven type II 0D and 1D heterostructured photocatalysts. Some other low dimensional nanomaterials which have shown high-performance photocatalysis are also presented. We expect this review to provide a guideline for readers to gain a clear picture of fabrication and application of type II heterostructures.

Visible light driven type II heterostructures and their enhanced photocatalysis properties: a review

Visible-light-driven photochemistry has continued to attract heightened interest due to its capacity to efficiently harvest solar energy and its potential to solve the global energy crisis. Plasmonic nanostructures boast broadly tunable optical properties coupled with catalytically active surfaces that offer a unique opportunity for solar photochemistry. Resonant optical excitation of surface plasmons produces energetic hot electrons that can be collected to facilitate chemical reactions. This review sums up recent theoretical and experimental approaches for understanding the underlying photophysical processes in hot electron generation and discusses various electron-transfer models on both plasmonic metal nanostructures and plasmonic metal/semiconductor heterostructures. Following that are highlights of recent examples of plasmon-driven hot electron photochemical reactions within the context of both cases. The review concludes with a discussion about the remaining challenges in the field and future oppor...

Surface-Plasmon-Driven Hot Electron Photochemistry

The manipulation of optical energy in structures smaller than the wavelength of light is key to the development of integrated photonic devices for computing, communications and sensing. Wide band gap semiconductor nanostructures with near-cylindrical geometry and large dielectric constants exhibit two-dimensional ultraviolet and visible photonic confinement (i.e. waveguiding). Combined with optical gain, the waveguiding behavior facilitates highly directional lasing at room temperature in controlled-growth nanowires with favorable resonant feedback. We have further explored the properties and functions of individual ultralong crystalline oxide nanoribbons that act as subwavelength optical waveguides, nonlinear frequency converter and assess their applicability as nanoscale photonic elements and scanning probes. Semiconductor nanowires offer a versatile photonic platform due to the ability to specify material size, shape, and composition. The integration of multiple unique materials with distinct optical properties promises to enable advances for several applications ranging from solid state lighting, biochemical sensing to imaging and spectroscopy.

http://ieeexplore.ieee.org/iel5/4302825/4302826/04302854.pdf

Nanowire Photonics

We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc blende InP nanowires. We have constructed the energy band diagram of the resulting multiquantum well heterostructure and have performed detailed quantum mechanical calculations of the electron and hole wave functions. The excitation power dependent blue-shift of the photoluminescence can be explained in terms of the predicted staggered band alignment of the rotationally twinned zinc blende/wurzite InP heterostructure and of the concomitant diagonal transitions between localized electron and hole states responsible for radiative recombination. The ability of rotational twinning to introduce a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering.

/pdf/optical-properties-of-rotationally-twinned-inp-nanowire-3eobeug0tr.pdf

Optical properties of rotationally twinned InP nanowire heterostructures.

Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.

https://iopscience.iop.org/article/10.1088/0957-4484/19/30/305201/pdf

Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

We have synthesized GaAs−GaxIn1-xP (0.34 < x < 0.69) core−shell nanowires by metal−organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 °C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 °C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core−shell nanowires were studied and confirmed by calculations based on deformation potential theory.

Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires

We report on spectrally resolved photocurrent measurements on single self-assembled nanowire heterostructures. The wires, typically 3 microm long with an average diameter of 85 nm, consist of InAs with a 1 microm central part of InAsP. Two different sets of wires were prepared with phosphorus contents of 15+/-3% and 35+/-3%, respectively, as determined by energy-dispersive spectroscopy measurements made in transmission electron microscopy. Ohmic contacts are fabricated to the InAs ends of the wire using e-beam lithography. The conduction band offset between the InAs and InAsP regions virtually removes the dark current through the wires at low temperature. In the optical experiments, interband excitation in the phosphorus-rich part of the wires results in a photocurrent with threshold energies of about 0.65 and 0.82 eV, respectively, in qualitative agreement with the expected band gap of the two compositions. Furthermore, a strong polarization dependence is observed with an order of magnitude larger photocurrent for light polarized parallel to the wire than for light polarized perpendicular to the wire. We believe that these wires form promising candidates as nanoscale infrared polarization-sensitive photodetectors.

Infrared photodetectors in heterostructure nanowires.

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

/pdf/in-situ-etching-for-total-control-over-axial-and-radial-3gc4keozfu.pdf

Johanna Trägårdh

Papers

Optical properties of rotationally twinned InP nanowire heterostructures.

Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires

Infrared photodetectors in heterostructure nanowires.

In Situ Etching for Total Control Over Axial and Radial Nanowire Growth