Journal ArticleDOI
Infrared photodetectors in heterostructure nanowires.
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TLDR
Spectrally resolved photocurrent measurements on single self-assembled nanowire heterostructures believe that these wires form promising candidates as nanoscale infrared polarization-sensitive photodetectors.Abstract:
We report on spectrally resolved photocurrent measurements on single self-assembled nanowire heterostructures. The wires, typically 3 microm long with an average diameter of 85 nm, consist of InAs with a 1 microm central part of InAsP. Two different sets of wires were prepared with phosphorus contents of 15+/-3% and 35+/-3%, respectively, as determined by energy-dispersive spectroscopy measurements made in transmission electron microscopy. Ohmic contacts are fabricated to the InAs ends of the wire using e-beam lithography. The conduction band offset between the InAs and InAsP regions virtually removes the dark current through the wires at low temperature. In the optical experiments, interband excitation in the phosphorus-rich part of the wires results in a photocurrent with threshold energies of about 0.65 and 0.82 eV, respectively, in qualitative agreement with the expected band gap of the two compositions. Furthermore, a strong polarization dependence is observed with an order of magnitude larger photocurrent for light polarized parallel to the wire than for light polarized perpendicular to the wire. We believe that these wires form promising candidates as nanoscale infrared polarization-sensitive photodetectors.read more
Citations
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Broadband ZnO Single-Nanowire Light-Emitting Diode
TL;DR: A novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers is presented, demonstrated by constructing the first zinc oxide single-nanowire light- Emitting diode at room temperature.
Journal ArticleDOI
One-dimensional inorganic nanostructures: synthesis, field-emission and photodetection.
Tianyou Zhai,Tianyou Zhai,Liang Li,Ying Ma,Meiyong Liao,Xi Wang,Xi Wang,Xiaosheng Fang,Jiannian Yao,Yoshio Bando,Dmitri Golberg +10 more
TL;DR: In this paper, a critical review mainly focuses on recent research progresses in 1D inorganic nanostructures, including their rational synthesis and potential applications, with an emphasis on field-emitter and photodetector applications.
Journal ArticleDOI
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
Hannah J. Joyce,Qiang Gao,Hoe Hark Tan,Chennupati Jagadish,Yong Kim,Xin Zhang,Yanan Guo,Jin Zou +7 more
TL;DR: Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.
Journal ArticleDOI
The synthesis and fabrication of one-dimensional nanoscale heterojunctions.
TL;DR: This review separates the methods into vapor-phase synthesis, solution- phase synthesis, template-based synthesis, and other approaches, such as lithography, electrospinning, and assembly, used to form a variety of heterojunctions from different combinations of semiconductor, metal, carbon, and polymeric materials.
Journal ArticleDOI
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon
C. Patrik T. Svensson,Thomas Mårtensson,Thomas Mårtensson,Johanna Trägårdh,Christina Larsson,Michael Rask,Dan Hessman,Lars Samuelson,Jonas Ohlsson +8 more
TL;DR: Vertical light emitting diodes based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated, enabling applications such as on-chip optical communication.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.
Journal ArticleDOI
Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotubes
TL;DR: In this article, the authors discuss the development of a general approach to rational synthesis of crystalline nanowires of arbitrary composition, and illustrate solutions to these challenges with measurements of the atomic structure and electronic properties of carbon nanotubes.
Journal ArticleDOI
Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
Yi Cui,Charles M. Lieber +1 more
TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.