J
John Z. Pastalan
Researcher at Alcatel-Lucent
Publications - 10
Citations - 1578
John Z. Pastalan is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Surface roughness & Electrode. The author has an hindex of 7, co-authored 10 publications receiving 1334 citations. Previous affiliations of John Z. Pastalan include Bell Labs & Avago Technologies.
Papers
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Journal ArticleDOI
A Generalized Memory Polynomial Model for Digital Predistortion of RF Power Amplifiers
TL;DR: This paper relates the general Volterra representation to the classical Wiener, Hammerstein, Wiener-Hammerstein, and parallel Wiener structures, and describes some state-of-the-art predistortion models based on memory polynomials, and proposes a new generalizedMemory polynomial that achieves the best performance to date.
Journal ArticleDOI
Compressed Transport of Baseband Signals in Radio Access Networks
TL;DR: A low-latency baseband signal compression scheme is presented that significantly lowers the transport data rate while maintaining low levels of signal distortion, thus resulting in a lower-cost transport network.
Journal ArticleDOI
A least-squares/Newton method for digital predistortion of wideband signals
TL;DR: A new model for the wideband predistorter and a least-squares(LS)/Newton algorithm to estimate the model parameters are proposed and good linearization performance is achieved by using the new model in an experimental testbed.
Patent
Method And Apparatus For Signal Compression And Decompression
TL;DR: In this article, the method of compressing a digital signal includes reducing redundancies in the digital signal, scaling a block of samples output from the reducing step by a scaling factor, and quantizing the scaled samples to produce compressed samples.
Patent
Method for producing devices having piezoelectric films
TL;DR: In this article, a method for improved piezoelectric films for use in a resonator device is disclosed, which is based on applicant's recognition that the texture of a PPI is directly affected by the surface morphology of the underlying electrode, and additionally, the electrode is affected by a surface morphology associated with the underlying oxide layer or Bragg stack.