J
J.E. Bower
Researcher at Alcatel-Lucent
Publications - 38
Citations - 836
J.E. Bower is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Ultrashort pulse & Lithography. The author has an hindex of 16, co-authored 38 publications receiving 826 citations. Previous affiliations of J.E. Bower include Sandia National Laboratories & Agere Systems.
Papers
More filters
Proceedings ArticleDOI
The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length
J.M. Hergenrother,Don Monroe,F.P. Klemens,G. R. Weber,William M. Mansfield,M.R. Baker,Frieder H. Baumann,K. Bolan,J.E. Bower,N.A. Ciampa,R. Cirelli,J.I. Colonell,D. J. Eaglesham,J. Frackoviak,H.-J. Gossmann,Martin L. Green,Steven James Hillenius,C. A. King,Rafael N. Kleiman,W.Y.C. Lai,J.T.-C. Lee,R. Liu,H.L. Maynard,M.D. Morris,Sang Hyun Oh,C.S. Pai,Conor S. Rafferty,J. Rosamilia,T.W. Sorsch,H.-H. Vuong +29 more
TL;DR: In this article, the Vertical Replacement Gate (VRG) MOSFET was proposed, which combines a gate length controlled precisely through a deposited film thickness, independently of lithography and etch, and a high quality gate oxide grown on a single-crystal Si channel.
Journal ArticleDOI
Optical transmission through double-layer metallic subwavelength slit arrays.
Ho Bun Chan,Zsolt Marcet,Kwangje Woo,David B. Tanner,Dustin W. Carr,J.E. Bower,Raymond A. Cirelli,E. Ferry,F. Klemens,J.F. Miner,Chien-Shing Pai,Joseph Ashley Taylor +11 more
TL;DR: Measurements of transmission of infrared radiation through double-layer metallic grating structures and numerical simulations using rigorous coupled wave analysis are performed to explain the strong dependence of the peak transmission on the lateral shift between the metal layers.
Proceedings ArticleDOI
Wavelength-selective 1/spl times/4 switch for 128 WDM channels at 50 GHz spacing
Dan M. Marom,David T. Neilson,Dennis S. Greywall,Nagesh R. Basavanhally,Paul Kolodner,Yee L. Low,Flavio Pardo,C. A. Bolle,Sethumadhavan Chandrasekhar,L. L. Buhl,Clinton Randy Giles,Sang Hyun Oh,C.-S. Pai,K.S. Werder,Hyongsok Tom Soh,G.R. Bogart,E. Ferry,F. Klemens,K. Teffeau,J. F. Miner,S.N. Rogers,J.E. Bower,R. C. Keller,W.M. Mansfield +23 more
TL;DR: In this article, a reconfigurable wavelength-selective switch that independently distributes 128 input WDM channels to four output ports is presented, based on bulk optics and MEMS micro-mirrors, exhibits <5 dB insertion loss and flat-top pass-bands.
Journal ArticleDOI
Imaging nanostructures with coherent phonon pulses
B. C. Daly,N.C.R. Holme,Takashi Buma,Cyril Branciard,Theodore B. Norris,Donald M. Tennant,Joseph Ashley Taylor,J.E. Bower,Stanley Pau +8 more
TL;DR: In this article, the authors demonstrate submicron resolution imaging using picosecond acoustic phonon pulses generated by impulsive thermoelastic excitation of a patterned 15nm-thick metal film on a crystalline substrate using ultrafast optical pulses.
Proceedings ArticleDOI
Si-doped aluminates for high temperature metal-gate CMOS: Zr-Al-Si-O, a novel gate dielectric for low power applications
L. Manchanda,Martin L. Green,R. B. van Dover,M.D. Morris,A. Kerber,Y. Hu,Jin-Ping Han,P.J. Silverman,T.W. Sorsch,G. R. Weber,Vincent M. Donnelly,K. Pelhos,F.P. Klemens,N.A. Ciampa,A. Kornblit,Y.O. Kim,J.E. Bower,D. Barr,E. Ferry,D. C. Jacobson,J. Eng,B. Busch,H. Schulte +22 more
TL;DR: In this article, a new class of high K gate dielectric materials, Si-doped aluminates, with TiN gates, with high temperature CMOS processing and therefore do not require replacement gate technology was investigated.