J
Jonas Deuermeier
Researcher at Universidade Nova de Lisboa
Publications - 56
Citations - 1094
Jonas Deuermeier is an academic researcher from Universidade Nova de Lisboa. The author has contributed to research in topics: Thin film & Engineering. The author has an hindex of 13, co-authored 38 publications receiving 632 citations. Previous affiliations of Jonas Deuermeier include University of Lisbon & Technische Universität Darmstadt.
Papers
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Journal ArticleDOI
Laser-Induced Graphene Strain Sensors Produced by Ultraviolet Irradiation of Polyimide
Alexandre F. Carvalho,António J. S. Fernandes,Cátia Leitão,Jonas Deuermeier,Ana C. Marques,Rodrigo Martins,Elvira Fortunato,Florinda M. Costa +7 more
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Band Alignment Engineering at Cu2O/ZnO Heterointerfaces
Sebastian Siol,Jan C. Hellmann,S. David Tilley,Michael Graetzel,Jan Morasch,Jonas Deuermeier,Wolfram Jaegermann,Andreas Klein +7 more
TL;DR: It is demonstrated how changes in deposition conditions can dramatically influence the functional properties of an interface, even within the same material system.
Journal ArticleDOI
Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide
TL;DR: In this paper, the deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified and the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu 2O onto ITO and vice versa.
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Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells
Kasra Kardarian,Daniela Nunes,Paolo Sberna,Paolo Sberna,Adam Ginsburg,David A. Keller,Joana V. Pinto,Jonas Deuermeier,Assaf Y. Anderson,Arie Zaban,Rodrigo Martins,Elvira Fortunato +11 more
TL;DR: In this paper, the effect of magnesium doping on structural, optoelectrical and electrical properties of Cu2O thin films prepared by spray pyrolysis was investigated, showing that the variation in the concentration of Mg shows significant impact on the final thin film properties.
Journal ArticleDOI
A Sustainable Approach to Flexible Electronics with Zinc‐Tin Oxide Thin‐Film Transistors
Cristina Fernandes,Ana Santa,Ângelo Santos,Pydi Ganga Bahubalindruni,Jonas Deuermeier,Rodrigo Martins,Elvira Fortunato,Pedro Barquinha +7 more
TL;DR: In this paper, the performance of flexible zinc-tin oxide (ZTO) thin-film transistors (TFTs) processed at only 180 °C is reported. But no critical elements as In and Ga are used, device performance approaches the one of indium-gallium-zinc oxide TFTs.