An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

A semiconductor memory device includes a memory cell array having a first group of main blocks, a second group of main blocks and redundancy blocks replacing the first group of main blocks or the second group of main blocks, a repair logic suitable for enabling a replacement signal when one or more of the second group of main blocks are defective, a control logic suitable for generating an address for the second group of main blocks in response to a dedicated command for access to one or more of the second group of main blocks, and an address decoder suitable for selecting one or more of the redundancy blocks based on the address for the second group of main blocks when the replacement signal is enabled.

Semiconductor memory device and method of operating the same

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Electronic device and method for fabricating the same

A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.

Precessional spin current structure for mram

A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.

Spin transfer torque structure for MRAM devices having a spin current injection capping layer

Magnetic devices and methods of fabricating the same are provided. According to the magnetic device, a tunnel barrier pattern is interposed between a first magnetic pattern and a second magnetic pattern. An edge portion of the tunnel barrier pattern is thicker than a central portion of the tunnel barrier pattern. The central portion of the tunnel barrier pattern has a substantially uniform thickness.

Magnetic devices and methods of fabricating the same

In recent years, artificial intelligence (AI) technology has proliferated rapidly and widely into application areas such as speech recognition, health care, and autonomous driving. To increase the capabilities of AI more powerful systems are needed to process a larger amount of data. This requirement has made domain-specific accelerators, such as GPUs and TPUs, popular; as they can provide orders of magnitude higher performance than state-of-the-art CPUs. However, these accelerators can only operate at their peak performance when they get the necessary data from memory as quickly as it is processed: requiring off-chip memory with a high bandwidth and a large capacity [1]. HBM has thus far met the bandwidth and capacity requirement [2] –[6], but recent AI technologies such as recurrent neural networks require an even higher bandwidth than HBM [7]–[8]. While a further increase in off-chip bandwidth can be accomplished by various techniques, it is often limited by power constraints at the chip or system level [9]. Hence, it is essential to decrease demand for off-chip bandwidth with unconventional architectures: such as processing-in-memory. In this paper, we present function-In-memory DRAM (FIMDRAM) that integrates a 16-wide single-instruction multiple-data engine within the memory banks and that exploits bank-level parallelism to provide $4 \times $ higher processing bandwidth than an off-chip memory solution. Second, we show techniques that do not require any modification to conventional memory controllers and their command protocols, which make FIMDRAM more practical for quick industry adoption. Finally, we conclude this paper with circuit- and system-level evaluations of our fabricated FIMDRAM.

25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications

A memory module includes a plurality of memory devices and a buffer chip. The buffer chip manages the memory devices. The buffer chip includes a refresh control circuit that groups a plurality of memory cell rows of the memory devices into a plurality of groups according to a data retention time of tire memory cell rows. The buffer chip selectively refreshes each of the plurality of groups in each of a plurality of refresh time regions that are periodically repeated and applies respective refresh periods to the plurality of groups, respectively.

Memory modules and memory systems

This brief presents a duty cycle corrector (DCC) using a binary search algorithm with successive approximation register (SAR). The proposed DCC consists of a duty-cycle detector, a duty-cycle adjuster, its controller and an output buffer. In order to achieve fast duty-correction with a small die area, a SAR-controller is exploited as a duty-correction controller. The proposed DCC circuit has been implemented and fabricated in a 0.13-μm CMOS process and occupies 0.048 mm2. The measured duty-cycle error for the 50% duty-rate is below 1% (or 10 pS) within 320 pS external input duty-cycle error. The duty of output signal is corrected only with 14 cycles. This DCC operates from 312.5 MHz to 1 GHz and dissipates 3.2 mW at 1 GHz.

A 0.31–1 GHz Fast-Corrected Duty-Cycle Corrector With Successive Approximation Register for DDR DRAM Applications

A semiconductor memory device includes a memory cell array and a test circuit. The test circuit reads data stream from the memory cell array, configured to, on comparing bits of each first unit in the data stream, compares corresponding bits in the first units as each second unit and outputs a fail information signal including pass/fail information on the data stream and additional information on the data stream, in a test mode of the semiconductor memory device.

Jong-Pil Son

Papers

Magnetic devices and methods of fabricating the same

25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications

Memory modules and memory systems

A 0.31–1 GHz Fast-Corrected Duty-Cycle Corrector With Successive Approximation Register for DDR DRAM Applications

Semiconductor memory devices, memory systems including the same and methods of operating the same