O
O Seongil
Researcher at Samsung
Publications - 6
Citations - 209
O Seongil is an academic researcher from Samsung. The author has contributed to research in topics: Dram & Memory management. The author has an hindex of 3, co-authored 5 publications receiving 56 citations.
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Proceedings ArticleDOI
Hardware Architecture and Software Stack for PIM Based on Commercial DRAM Technology : Industrial Product
Sukhan Lee,Shin-haeng Kang,Jae-Hoon Lee,Hyeon-Su Kim,Eojin Lee,Seung-Woo Seo,Hosang Yoon,Seung-Won Lee,Kyoung-Hwan Lim,Hyun-Sung Shin,Jin-Hyun Kim,O Seongil,Anand Iyer,Wang David T,Kyomin Sohn,Nam Sung Kim +15 more
TL;DR: Wang et al. as discussed by the authors proposed an innovative yet practical processing-in-memory (PIM) architecture, which improves the performance of memory-bound neural network kernels and applications by 11.2× and 3.5× respectively.
Proceedings ArticleDOI
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications
Young-Cheon Kwon,Sukhan Lee,Jae-Hoon Lee,Sang-Hyuk Kwon,Je Min Ryu,Jong-Pil Son,O Seongil,Hak-soo Yu,Hae-Suk Lee,Soo-Young Kim,Young-min Cho,Jin Guk Kim,Jongyoon Choi,Hyun-Sung Shin,Jin Kim,Bengseng Phuah,Hyoung-Min Kim,Myeong Jun Song,Ahn Choi,Daeho Kim,SooYoung Kim,Eun-Bong Kim,Wang David T,Shin-haeng Kang,Yu-Hwan Ro,Seung-Woo Seo,Joon-Ho Song,Jae-Youn Youn,Kyomin Sohn,Nam Sung Kim +29 more
TL;DR: FIMDRAM as discussed by the authors integrates a 16-wide single-instruction multiple-data engine within the memory banks and exploits bank-level parallelism to provide $4 \times higher processing bandwidth than an off-chip memory solution.
Proceedings ArticleDOI
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices
Sanguhn Cha,O Seongil,Hyun-Sung Shin,Sang-joon Hwang,Kwang-Il Park,Seong Jin Jang,Joo Sun Choi,Gyo Young Jin,Young Hoon Son,Hyunyoon Cho,Hyunyoon Cho,Jung Ho Ahn,Nam Sung Kim,Nam Sung Kim +13 more
TL;DR: This work identifies that aggressive miniaturization makes DRAM cells more sensitive to random telegraph noise or variable retention time, which is dominantly manifested as a surge in randomly scattered single-cell faults, and advocates using In-DRAM ECC to overcome the DRAM scaling challenges and architecture to accomplish high area efficiency and minimal performance degradation.
Proceedings ArticleDOI
3D-Xpath: high-density managed DRAM architecture with cost-effective alternative paths for memory transactions
Suk-Han Lee,Ki-Won Lee,Minchul Sung,Mohammad Alian,Chan-kyung Kim,Wooyeong Cho,Reum Oh,O Seongil,Jung Ho Ahn,Nam Sung Kim +9 more
TL;DR: A high-density managed DRAM architecture, dubbed 3D-XPath for applications demanding both low latency and high capacity for memory, that allows unused memory channels to service memory requests from applications when primary channels supposed to handle the memory requests are blocked by page transfers at given moments, considerably increasing the high-percentile response time.
Proceedings ArticleDOI
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process
Dae Hyun Kim,Byung Kyu Song,Hyun-A Ahn,Woongjoon Ko,Sung-Geun Do,Kihan Kim,Seung-Hoon Oh,Hye-Yoon Joo,Geuntae Park,Jin-Hun Jang,Yong-Hun Kim,Dong-Hoon Lee,Jae-Hoon Jung,Yongmin Kwon,Youngjae Kim,Jae Ho Jung,O Seongil,Seoulmin Lee,Jaeseong Lim,Junho Son,Jisu Min,Haebin Do,Jae Sik Yoon,Isak Hwang,Jin Su Park,Hong Suwon Shim,Seryeong Yoon,Dong-Ho Choi,Jihoon Lee,Soohan Woo,Eun Jung Hong,Jun Yong Choi,Jae Sung Kim,Sang-Shin Han,Jong-Min Bang,Bok Yong Park,Jang Hoo Kim,Seouk-Kyu Choi,Gong-Heum Han,Yoo-Chang Sung,Won-Il Bae,Jeong-Don Lim,Seung-jae Lee,Changsik Yoo,Sang-joon Hwang,Jooyoung Lee +45 more
TL;DR: This paper has successfully implemented a 9.5Gb/s/pin 16Gb LPDDR5X using a fourth generation 10nm DRAM fabrication technology and has new high-speed enabling features: per-pin DFE training, pre-emphasis for DQ driver, receiver offset calibration training, and a read duty-cycle adjuster.