Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Nano- and bulk-silicon-based insertion anodes for lithium-ion secondary cells

A review of the electrochemical performance of alloy anodes for lithium-ion batteries

http://web.stanford.edu/group/cui_group/papers/Hui_Today_2012.pdf

Designing nanostructured Si anodes for high energy lithium ion batteries

High-throughput density functional theory (HT DFT) is fast becoming a powerful tool for accelerating materials design and discovery by the amassing tens and even hundreds of thousands of DFT calculations in large databases. Complex materials problems can be approached much more efficiently and broadly through the sheer quantity of structures and chemistries available in such databases. Our HT DFT database, the Open Quantum Materials Database (OQMD), contains over 200,000 DFT calculated crystal structures and will be freely available for public use at http://oqmd.org
 . In this review, we describe the OQMD and its use in five materials problems, spanning a wide range of applications and materials types: (I) Li-air battery combination catalyst/electrodes, (II) Li-ion battery anodes, (III) Li-ion battery cathode coatings reactive with HF, (IV) Mg-alloy long-period stacking ordered (LPSO) strengthening precipitates, and (V) training a machine learning model to predict new stable ternary compounds.

Materials Design and Discovery with High-Throughput Density Functional Theory: The Open Quantum Materials Database (OQMD)

Electrochemical characteristics of a-Si thin film anode for Li-ion rechargeable batteries

Electrochemical characteristics of Al2O3-coated lithium manganese spinel as a cathode material for a lithium secondary battery

Role of functional nano-sized inorganic fillers in poly(ethylene) oxide-based polymer electrolytes

Electrochemical characteristics of two types of PEO-based composite electrolyte with functional SiO2

The effects of an O2 plasma-treated SiNX-based insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) were investigated. We tried to improve the interfacial characteristics by reducing the trap density between the SiNX gate insulator and a-IGZO channel by the O2 plasma treatment. The plasma treated-device performances were remarkably improved. The drastic improvements obtained for the O2 plasma-treated a-IGZO TFTs included excellent bias stability as well as a high field effect mobility (μFE) of 19.4 cm2/V s, an on/off current (ION/IOFF) of 108, and a subthreshold value (S) of 0.5 V/decade.

Jong-Wan Park

Papers

Electrochemical characteristics of a-Si thin film anode for Li-ion rechargeable batteries

Electrochemical characteristics of Al2O3-coated lithium manganese spinel as a cathode material for a lithium secondary battery

Role of functional nano-sized inorganic fillers in poly(ethylene) oxide-based polymer electrolytes

Electrochemical characteristics of two types of PEO-based composite electrolyte with functional SiO2

Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator