J
Jorden A. van Dam
Researcher at Delft University of Technology
Publications - 7
Citations - 1735
Jorden A. van Dam is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Nanowire & Josephson effect. The author has an hindex of 5, co-authored 7 publications receiving 1641 citations. Previous affiliations of Jorden A. van Dam include Kavli Institute of Nanoscience & Philips.
Papers
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Journal ArticleDOI
Tunable supercurrent through semiconductor nanowires
Yong-Joo Doh,Jorden A. van Dam,Jorden A. van Dam,Aarnoud Laurens Roest,Aarnoud Laurens Roest,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers,Leo P. Kouwenhoven,Leo P. Kouwenhoven,Silvano De Franceschi,Silvano De Franceschi +10 more
TL;DR: Nanoscale supercond conductor/semiconductor hybrid devices are assembled from indium arsenide semiconductor nanowires individually contacted by aluminum-based superconductor electrodes, which form superconducting weak links operating as mesoscopic Josephson junctions with electrically tunable coupling.
Journal ArticleDOI
Single quantum dot nanowire LEDs.
Ethan D. Minot,Freek Kelkensberg,Maarten P. van Kouwen,Jorden A. van Dam,Leo P. Kouwenhoven,Valery Zwiller,Magnus T. Borgström,Olaf Wunnicke,Marcel A. Verheijen,Erik P. A. M. Bakkers +9 more
TL;DR: In this article, reproducible fabrication of InP−InAsP nanowire light-emitting diodes in which electron−hole recombination is restricted to a quantum-dot-sized InAsP section is reported.
Journal ArticleDOI
Supercurrent reversal in quantum dots
Jorden A. van Dam,Yuli V. Nazarov,Erik P. A. M. Bakkers,Silvano De Franceschi,Silvano De Franceschi,Leo P. Kouwenhoven +5 more
TL;DR: It is demonstrated that the supercurrent reverses sign is added by adding a single electron spin to the quantum dot by means of local electrostatic gating, which depends on the character of the orbital wavefunctions.
Journal ArticleDOI
Quantum supercurrent transistors in carbon nanotubes
TL;DR: It is found, in good agreement with existing theory, that the product of the critical current and the normal state resistance becomes an oscillating function, in contrast to being constant as in previously explored regimes.
Journal ArticleDOI
Epitaxial growth of InP nanowires on germanium.
Erik P. A. M. Bakkers,Jorden A. van Dam,Silvano De Franceschi,Leo P. Kouwenhoven,Monja Kaiser,Marcel A. Verheijen,Harry J. Wondergem,Paul Van Der Sluis +7 more
TL;DR: The principle of epitaxial growth of III–V nanowires on a group IV substrate is demonstrated by a vapour–liquid–solid method and the as-grown wires are monocrystalline and virtually free of dislocations.