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Open AccessJournal ArticleDOI

Single quantum dot nanowire LEDs.

TLDR
In this article, reproducible fabrication of InP−InAsP nanowire light-emitting diodes in which electron−hole recombination is restricted to a quantum-dot-sized InAsP section is reported.
Abstract
We report reproducible fabrication of InP−InAsP nanowire light-emitting diodes in which electron−hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operation of these nanoLEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.

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Citations
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Journal ArticleDOI

Semiconductor nanowire: what's next?

TL;DR: In this perspective, a critical look at the research progress within the nanowire community for the past decade is taken and personal opinions on what the future trends will be in nanowires research are offered.
Proceedings Article

Nanowire Photonics

TL;DR: In this paper, the properties and functions of individual ultralong crystalline oxide nanoribbons that act as subwavelength optical waveguides, nonlinear frequency converter and assess their applicability as nanoscale photonic elements and scanning probes are explored.
Journal ArticleDOI

Controlled polytypic and twin-plane superlattices in iii-v nanowires.

TL;DR: By selectively tuning the crystal structure, this work fabricates highly reproducible polytypic and twin-plane superlattices within single nanowires, which could lead to bandgap engineering and novel electronic behaviour.
Journal ArticleDOI

Twinning superlattices in indium phosphide nanowires

TL;DR: It is shown that the crystal structure of indium phosphide (InP) nanowires can be controlled by using impurity dopants, and it is demonstrated that zinc decreases the activation barrier for two-dimensional nucleation growth of zinc-blende InP and therefore promotes crystallization of the InPnanowires in the zinc- Blende, instead of the commonly found wurtzite, crystal structure.
Journal ArticleDOI

Spin–orbit qubit in a semiconductor nanowire

TL;DR: In this paper, a spin-orbit quantum bit (qubit) is implemented in an indium arsenide nanowire, where the spinorbit interaction is so strong that spin and motion can no longer be separated.
References
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Journal ArticleDOI

Room-temperature ultraviolet nanowire nanolasers

TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

TL;DR: In this paper, the pseudodielectric functions of spectroscopic ellipsometry and refractive indices were measured using the real-time capability of the spectro-optical ellipsometer.
Journal ArticleDOI

Growth of nanowire superlattice structures for nanoscale photonics and electronics.

TL;DR: Single-nanowire photoluminescent, electrical transport and electroluminescence measurements show the unique photonic and electronic properties of these nanowire superlattices, and suggest potential applications ranging from nano-barcodes to polarized nanoscale LEDs.
Journal ArticleDOI

Kelvin probe force microscopy

TL;DR: In this paper, the authors measured the contact potential difference between different materials using scanning force microscopy (SfM) for the first time, using images of gold, platinum, and palladium surfaces taken in air.
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