Juan A. López-Villanueva

TL;DR: In this paper, a quasi-two-dimensional treatment of the interaction between a neutral near-interface oxide trap and an electron in the subband of the inversion layer has been developed to obtain expressions for the capture and emission times where the influence of the trap parameters (energy depth, distance to the interface, and electron-phonon coupling factor) is clearly shown.

TL;DR: In this article, the effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed, and it is shown that if the silicon layer is thin enough (thinner than 10 nm) the presence of the buried interface plays a very important role, both by modifying the surface Roughness scattering rate due to the gate interface, and by itself providing a non-negligible scattering rate.

TL;DR: In this paper, a low-cost and flexible humidity sensor was designed, fabricated by using an inkjet-printing process, and fully characterized, based on the principles of the capacitor and the ability of a polyimide to absorb humidity.

TL;DR: In this article, a physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed, based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and Huang-Rhys factor.

TL;DR: The results suggest that the transistor studied would be an excellent candidate for use as the sensing device of a low-cost measurement system capable of in vivo dosimetry.