Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (<2 V) is possible with ION:IOFF = 10(7), SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm(2) V(-1) s(-1), μFE(max) = 50 cm(2) V(-1) s(-1). Furthermore, X-ray diffraction analysis indicates that the 300 °C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.

Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

Lanthanide rare earth oxide thin film as an alternative gate oxide

Low-temperature (≤400 °C), stackable oxide semiconductors are promising as an upper transistor ingredient for monolithic three-dimensional integration The atomic layer deposition (ALD) route provi

Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction

In this letter, we investigated the electrical and reliability characteristics of high- κ HoTiO3 amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high ION/IOFF current ratio of 1.3 ×108. These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.

Jui-Fu Yang

Papers

Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics