F
Fa-Hsyang Chen
Researcher at Chang Gung University
Publications - 6
Citations - 149
Fa-Hsyang Chen is an academic researcher from Chang Gung University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 5, co-authored 5 publications receiving 130 citations.
Papers
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Journal ArticleDOI
Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors
TL;DR: The reliability of voltage stress can be improved using an Er2TiO5 gate dielectric, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2 TiO5 film.
Journal ArticleDOI
Effect of surface roughness on electrical characteristics in amorphous InGaZnO thin-film transistors with high-κ Sm2O3 dielectrics
Fa-Hsyang Chen,Meng-Ning Hung,Jui-Fu Yang,Shou-Yi Kuo,Jim-Long Her,Yasuhiro H. Matsuda,Tung-Ming Pan +6 more
TL;DR: In this article, the effect of surface roughness on the electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors was investigated.
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Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress
TL;DR: In this paper, transfer characteristics on threshold voltage instability behavior in amorphous indium-gallium-zinc oxide thin-film transistor (α-IGZO TFT) were investigated.
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Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices
TL;DR: In this paper, a conventional approach of doping to control the bistable resistance switching in Yb2O3 was investigated for nonvolatile memory applications, with the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current to Schottky type.
Journal ArticleDOI
Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors
TL;DR: In this paper, the structural properties and electrical characteristics of high-κ ErTixOy gate dielectrics on indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) were investigated.