J
Jukka Jaatinen
Researcher at University of Jyväskylä
Publications - 9
Citations - 73
Jukka Jaatinen is an academic researcher from University of Jyväskylä. The author has contributed to research in topics: Irradiation & Radiation damage. The author has an hindex of 5, co-authored 9 publications receiving 45 citations.
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Proceedings ArticleDOI
Low Energy Protons at RADEF - Application to Advanced eSRAMs
Heikki Kettunen,Veronique Ferlet-Cavrois,Philippe Roche,Mikko Rossi,Alexandre Louis Bosser,Gilles Gasiot,Francois-Xavier Guerre,Jukka Jaatinen,Arto Javanainen,Frederic Lochon,Ari Virtanen +10 more
TL;DR: In this paper, a low energy proton facility has been developed at RADEF, Jyvskyl, Finland, where the proton energy selection, calibration and dosimetry are described.
Journal ArticleDOI
Semi-Empirical Model for SEGR Prediction
Arto Javanainen,Veronique Ferlet-Cavrois,Jukka Jaatinen,Heikki Kettunen,Michele Muschitiello,Francesco Pintacuda,Mikko Rossi,James R. Schwank,Marty R. Shaneyfelt,Ari Virtanen +9 more
TL;DR: In this paper, a semi-empirical model for single event gate rupture (SEGR) prediction based on statistical variations in the energy deposition is presented. But the model is not suitable for the case of a single ion strike.
Journal ArticleDOI
Results on radiation hardness of black silicon induced junction photodetectors from proton and electron radiation
Juha Heinonen,C. Modanese,Antti Haarahiltunen,Heikki Kettunen,Mikko Rossi,Jukka Jaatinen,Mikko A. Juntunen +6 more
TL;DR: In this article, the stability of black silicon induced junction photodetectors under high-energy irradiation was tested with 11 MeV protons and 12 MeV electrons using fluence of 1 ⋅ 10 10 protons/cm2 and dose of 67 krad(Si), respectively.
Journal ArticleDOI
SEGR in SiO${}_2$ –Si$_3$ N$_4$ Stacks
Arto Javanainen,Veronique Ferlet-Cavrois,Alexandre Louis Bosser,Jukka Jaatinen,Heikki Kettunen,Michele Muschitiello,Francesco Pintacuda,Mikko Rossi,James R. Schwank,Marty R. Shaneyfelt,Ari Virtanen +10 more
TL;DR: In this paper, experimental SEGR data for MOS-devices, where the gate dielectrics are are made of stacked SiO2-Si3N4 structures, is presented.
Journal ArticleDOI
Methodologies for the Statistical Analysis of Memory Response to Radiation
Alexandre Louis Bosser,Viyas Gupta,Georgios Tsiligiannis,Christopher D. Frost,Ali Zadeh,Jukka Jaatinen,Arto Javanainen,Helmut Puchner,Frédéric Saigné,Ari Virtanen,Frédéric Wrobel,Luigi Dilillo +11 more
TL;DR: In this paper, a 65-nm SRAM irradiated with neutrons, protons and heavy ions was used for in-depth statistical analysis of single event upset data.