Jun Amano

TL;DR: In this article, a nanometer size polarized domains were written in a PbZr1−xTixO3 thin film using an atomic force microscope (AFM) and the relationship between the polarized domain and the grain of the film was investigated.

Abstract: Ferroelectric thin films as the recording media of scanning probe microscope-based storage devices were investigated using an atomic force microscope(AFM) technique. Polarization domains were formed in the PbZrxTi1-xO3(PZT) thin films epitaxialy grown on the epitaxial SrRuO3(SRO) thin films on SrTiO3 substrate by applying a pulse voltage between the conductive tip of AFM and SRO as a bottom electrode. The polarized domains were observed by detecting the inverse-piezoelectricity-induced surface vibration of the PZT thin film caused by applying an ac modulation voltage to the conductive tip. The recording density of polarized domains, domain switching speed and preliminary retention characteristics of polarized domains were studied. The polarized domains as small as 30 nm are formed in the PZT thin film with the thickness of 45 nm. The small domains can be formed by applying a 100 ns pulse of 10 V to the conductive tip. As for the retention characteristics of polarized domains with a size of 90–110...

TL;DR: By inserting the two additional masks required for the eFRAM module into this logic flow, this work has co-integrated ferroelectric memory and SRAM on a single wafer.

TL;DR: A piezoelectric cantilever pressure sensor has a substrate and a base portion attached to the substrate, and a beam portion suspended over a cavity as discussed by the authors, which generates a measurable voltage when deformed under pressure.

TL;DR: In this paper, the authors describe the preparation of sub-100 nm thick Pb(Zr,Ti)O3 (PZT) thin films by metalorganic chemical vapor deposition on 200 mm wafers using an industry-standard processing platform.