抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

With digital equipment becoming increasingly networked, either on wired or wireless networks, for personal and professional use alike, distributed software systems have become a crucial element in information and communications technologies. The study of these systems forms the core of the ARLES' work, which is specifically concerned with defining new system software architectures, based on the use of emerging networking technologies. In this context, we concentrate on the study of distributed systems which bring to life the vision of ubiquitous computing systems, also known as ambient intelligence.

반도체 공정 overview

Insect guts present distinctive environments for microbial colonization, and bacteria in the gut potentially provide many beneficial services to their hosts. Insects display a wide range in degree of dependence on gut bacteria for basic functions. Most insect guts contain relatively few microbial species as compared to mammalian guts, but some insects harbor large gut communities of specialized bacteria. Others are colonized only opportunistically and sparsely by bacteria common in other environments. Insect digestive tracts vary extensively in morphology and physicochemical properties, factors that greatly influence microbial community structure. One obstacle to the evolution of intimate associations with gut microorganisms is the lack of dependable transmission routes between host individuals. Here, social insects, such as termites, ants, and bees, are exceptions: social interactions provide opportunities for transfer of gut bacteria, and some of the most distinctive and consistent gut communities, with specialized beneficial functions in nutrition and protection, have been found in social insect species. Still, gut bacteria of other insects have also been shown to contribute to nutrition, protection from parasites and pathogens, modulation of immune responses, and communication. The extent of these roles is still unclear and awaits further studies.

The gut microbiota of insects - diversity in structure and function.

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

A review of Ga2O3 materials, processing, and devices

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A robust superhydrophobic and superoleophobic surface is demonstrated. On a large-size template of the transparent polydimethylsiloxane (PDMS) elastomer surface, perfectly ordered microstructures with an inverse-trapezoidal cross section are fabricated with two consecutive PDMS replication processes and a three-dimensional diffuser lithography technique. The hydrophobicity and transparency were improved by additional coating of a fluoropolymer layer. The robustness of superhydrophobicity was confirmed by the water droplet impinging test. This transparent, flexible, and superhydrophobic surface provides a new approach for self-cleaning surfaces.

A robust superhydrophobic and superoleophobic surface with inverse-trapezoidal microstructures on a large transparent flexible substrate

Nanoelectromechanical (NEM) switches have received widespread attention as promising candidates in the drive to surmount the physical limitations currently faced by complementary metal oxide semiconductor technology. The NEM switch has demonstrated superior characteristics including quasi-zero leakage behaviour, excellent density capability and operation in harsh environments. However, an unacceptably high operating voltage (4-20 V) has posed a major obstacle in the practical use of the NEM switch in low-power integrated circuits. To utilize the NEM switch widely as a core device component in ultralow power applications, the operation voltage needs to be reduced to 1 V or below. However, sub-1 V actuation has not yet been demonstrated because of fabrication difficulties and irreversible switching failure caused by surface adhesion. Here, we report the sub-1 V operation of a NEM switch through the introduction of a novel pipe clip device structure and an effective air gap fabrication technique. This achievement is primarily attributed to the incorporation of a 4-nm-thick air gap, which is the smallest reported so far for a NEM switch generated using a 'top-down' approach. Our structure and process can potentially be utilized in various nanogap-related applications, including NEM switch-based ultralow-power integrated circuits, NEM resonators, nanogap electrodes for scientific research and sensors.

A sub-1-volt nanoelectromechanical switching device

Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrates (1/spl sim/30 /spl Omega//spl middot/cm in resistivity) by surface micromachining technology (no substrate etch involved). The RF characteristics of the fabricated inductors have been measured and their equivalent circuit parameters have been extracted using a conventional lumped-element model. We have achieved a high peak Q-factor of 70 at 6 GHz with inductance of 1.38 nH (at 1 GHz) and a self-resonant frequency of over 20 GHz. To the best of our knowledge, this is the highest Q-factor ever reported on standard silicon substrates. This work has demonstrated that the proposed microelectromechanical systems (MEMS) inductors can be a viable technology option to meet the today's strong demands on high-Q on-chip inductors for multi-GHz silicon RF ICs.

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CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

Self-cleaning hybrid energy harvester to generate power from raindrop and sunlight

Microlens array (MLA) diffusers for light-emitting diode (LED) backlight systems have been developed. A high fill-factor photoresist mold for the MLA was fabricated using three-dimensional diffuser lithography, and the patterns were transferred to a nickel master mold for UV-curable polymer replication. The fabricated microlens had various paraboloidal profiles, and its aspect ratio was controlled from 1.0 to 2.1. The MLA diffuser showed a batwing radiation pattern with a radiation angle of 150°. The fabricated MLA diffuser may greatly enhance the color-mixing characteristics of LED backlight systems and help reduce the number of LEDs required.

Jun-Bo Yoon

Papers

A robust superhydrophobic and superoleophobic surface with inverse-trapezoidal microstructures on a large transparent flexible substrate

A sub-1-volt nanoelectromechanical switching device

CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

Self-cleaning hybrid energy harvester to generate power from raindrop and sunlight

Microlens array diffuser for a light-emitting diode backlight system