There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Evolution of Protein Molecules

Achieving high sensitivity in solid-state gas sensors can allow the precise detection of chemical agents. In particular, detection of volatile organic compounds (VOCs) at the parts per billion (ppb) level is critical for the early diagnosis of diseases. To obtain high sensitivity, two requirements need to be simultaneously satisfied: (i) low electrical noise and (ii) strong signal, which existing sensor materials cannot meet. Here, we demonstrate that 2D metal carbide MXenes, which possess high metallic conductivity for low noise and a fully functionalized surface for a strong signal, greatly outperform the sensitivity of conventional semiconductor channel materials. Ti3C2Tx MXene gas sensors exhibited a very low limit of detection of 50–100 ppb for VOC gases at room temperature. Also, the extremely low noise led to a signal-to-noise ratio 2 orders of magnitude higher than that of other 2D materials, surpassing the best sensors known. Our results provide insight in utilizing highly functionalized metallic...

Metallic Ti3C2Tx MXene Gas Sensors with Ultrahigh Signal-to-Noise Ratio

This article provides a comprehensive review of current research activities that concentrate on chemical sensors based on nanotubes, nanorods, nanobelts, and nanowires. We devote the most attention on the experimental principle, design of sensing devices, sensing mechanism, and some important conclusions. We elaborate on development of chemical sensors based on nanostructured materials in the following four sections: (1) nanotube sensors; (2) nanorod sensors; (3) nanobelt sensors; (4) nanowire sensors. We conclude this review with personal perspectives on the directions towards which future research on nanostructured sensors might be directed.

https://www.engr.colostate.edu/ECE581/fall07/reviews/Chemical%20sensors%20based%20on%20nanostructured%20materials.pdf

Chemical sensors based on nanostructured materials

We present a sugar-templated polydimethylsiloxane (PDMS) sponge for the selective absorption of oil from water. The process for fabricating the PDMS sponge does not require any intricate synthesis processes or equipment and it is not environmentally hazardous, thus promoting potential in environmental applications. The proposed PDMS sponge can be elastically deformed into any shape, and it can be compressed repeatedly in air or liquids without collapsing. Therefore, absorbed oils and organic solvents can be readily removed and reused by simply squeezing the PDMS sponge, enabling excellent recyclability. Furthermore, through appropriately combining various sugar particles, the absorption capacity of the PDMS sponge is favorably optimized.

/pdf/a-polydimethylsiloxane-pdms-sponge-for-the-selective-3kyq02xnl6.pdf

A polydimethylsiloxane (PDMS) sponge for the selective absorption of oil from water.

High performance PMOSFETs with gate length as short as 18-nm are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect. A 45 nm gate-length PMOS FinEET has an I/sub dsat/ of 410 /spl mu/A//spl mu/m (or 820 /spl mu/A//spl mu/m depending on the definition of the width of a double-gate device) at Vd=Vg=1.2 V and Tox=2.5 nm. The quasi-planar nature of this variant of the double-gate MOSFETs makes device fabrication relatively easy using the conventional planar MOSFET process technologies. Simulation shows possible scaling to 10-nm gate length.

Sub 50-nm FinFET: PMOS

A FinFET device is fabricated using conventional planar MOSFET technology. The device is fabricated in a silicon layer overlying an insulating layer (e.g., SIMOX) with the device extending from the insulating layer as a fin. Double gates are provided over the sides of the channel to provide enhanced drive current and effectively suppress short channel effects. A plurality of channels can be provided between a source and a drain for increased current capacity. In one embodiment two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.

Yang-Kyu Choi

Papers

Metallic Ti3C2Tx MXene Gas Sensors with Ultrahigh Signal-to-Noise Ratio

Chemical sensors based on nanostructured materials

A polydimethylsiloxane (PDMS) sponge for the selective absorption of oil from water.

Sub 50-nm FinFET: PMOS

Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture