A surgical stapling device for applying an array of surgical staples to tissue is provided. The stapling device includes an approximation mechanism for moving a cartridge assembly and an anvil assembly between spaced and approximated positions and a firing mechanism for ejecting the array of staples from the cartridge assembly. A single trigger is operable to effect approximation and firing of the device. The device also includes an alignment pin assembly which can be selectively manually or automatically advanced. The anvil assembly includes a stiffener plate which allows the device to have a reduced head portion profile.

Surgical stapling device

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A polymer composition includes a conductive polymer and at least one stretchability and electrical conductivity (STEC) enhancer, wherein a content of the STEC enhancer in the composition is at least about 1 wt.% of the composition.

Highly stretchable, transparent, and conductive polymer

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.

Positive resist composition and pattern-forming method using the same

A resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film. The resist lower-layer composition is insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid by heating at a temperature of 100° C. or higher.

Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process

A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3 −(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.

Thermal acid generator, resist undercoat material and patterning process

The present invention provides a polymer which has at least one or more of a repeating unit represented by a following general formula (1a), a repeating unit represented by a following general formula (2a) and a repeating unit represented by a following general formula (3b), and a repeating unit represented by a following general formula (1c), and a positive resist composition which contains as a base resin the polymer. Thereby, there can be provided a positive-resist composition having high sensitivity and high resolution in exposure with a high energy beam, wherein line edge roughness is small since swelling at the time of development is suppressed, and the residue after development is few.

Polymerizable compound, polymer, positive-resist composition, and patterning process using the same

PROBLEM TO BE SOLVED: To provide a high-resolution resist material having high sensitivity and high resolution and small line edge roughness to high energy beam having ≤300 nm wavelength and containing an acid generating agent excellent in heat stability and storage stability, and to provide a pattern-forming method using the resist material. SOLUTION: The chemical amplification positive type resist material comprises a base resin, the acid generating agent generating a fluorine group- containing alkylimidic acid and a solvent. The method for forming the pattern comprises a step for applying the resist material onto a base, a step for exposing the high energy beam having ≤300 nm wavelength through a photo mask after heat treatment to the resist material and a step for heat-treating the exposed material and developing the heat-treated material by a developing agent. COPYRIGHT: (C)2003,JPO

Photo acid generating agent compound, chemical amplification positive type resist material and method for forming pattern

PROBLEM TO BE SOLVED: To provide a material for a resist lower layer film for a multilayer resist process, in particular, for a two-layer resist process, the material functioning as an excellent antireflection film, in particular against exposure light at a short wavelength, that is, the material having high transparency, the optimum n and k values and excellent etching resistance for processing a substrate, and to provide a method of forming a pattern on a substrate by lithography by using the material. SOLUTION: The material for a resist lower layer film is a material for a multilayer resist film used in lithography. The material is characterised by containing at least a polymer having a repeating unit expressed by general formula (1). COPYRIGHT: (C)2005,JPO&NCIPI

Jun Hatakeyama

Papers

Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process

Thermal acid generator, resist undercoat material and patterning process

Polymerizable compound, polymer, positive-resist composition, and patterning process using the same

Photo acid generating agent compound, chemical amplification positive type resist material and method for forming pattern

Material for resist lower layer film and method of forming pattern