J
Jun Hatakeyama
Researcher at Shin-Etsu Chemical
Publications - 330
Citations - 8041
Jun Hatakeyama is an academic researcher from Shin-Etsu Chemical. The author has contributed to research in topics: Resist & Alkyl. The author has an hindex of 43, co-authored 330 publications receiving 8039 citations. Previous affiliations of Jun Hatakeyama include Takeda Pharmaceutical Company.
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Patent
Chemically amplified positive resist composition, patterning process, and acid-decomposable keto ester compound
TL;DR: A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of the steroid skeleton which is insoluble in alkaline developer, but turns soluble in acid under the action of acid.
Patent
生体電極組成物、生体電極、生体電極の製造方法、及び高分子化合物
畠山 潤,Jun Hatakeyama,元亮 岩淵,Motoaki Iwabuchi,渡邊 修,Osamu Watanabe,敬之 藤原,Noriyuki Fujiwara,泰嘉 黒田,Yasuyoshi Kuroda +9 more
TL;DR: In this paper, the authors describe a scenario where a person is confronted with a situation where he or she has to decide whether or not to respond to a message from another person.
Patent
Organic silicon compounds, hydrolyzates thereof, and rubber plasticizers
TL;DR: In this paper, a novel organic silicon compound and hydrolyzate thereof are provided in which an alkoxysilane having an alkoxy radical attached to the silicon atom is attached to a polyester through an alkylene radical.
Patent
Method for forming multilayer film and pattern forming method
TL;DR: In this paper, a method for forming a multilayer film to be used as a resist underlay film in lithography is presented, which is useful for a pattern forming method at high dimensional accuracy in dry etching.
Patent
Polymerizable monomer, polymer compound, resist material and pattern forming method
将大 福島,Masahiro Fukushima,提箸 正義,Masayoshi Sagehashi,長谷川 幸士,Koji Hasegawa,幸士 長谷川,畠山 潤,Jun Hatakeyama,和弘 片山,Kazuhiro Katayama +10 more
TL;DR: In this article, the problem of providing a polymerizable monomer for a resist material, which has excellent transparency to KrF laser light, Arf laser light and Flaser light and excellent development characteristics and allows formation of a negative pattern having a high contrast, high resolution and excellent etching durability and insoluble with an alkali developer is solved.