Jun-Rong Chen

TL;DR: In this paper, the authors investigated the electroluminescence and relatively external quantum efficiency of m-plane InGaN/GaN light emitting diodes (LEDs) emitting at 480 nm to elucidate the droop behaviors in nitride-based LEDs.

TL;DR: Comparison between polariton lasing and photon lasing in a ZnO-based hybrid microcavity under optical pumping is done in terms of the linewidth broadening, blue-shift of the emission peak, and polarization.

TL;DR: In this article, the effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been numerically investigated by employing an advanced device-simulation program.

TL;DR: In this paper, the effect of Auger recombination loss on efficiency droop by taking dif- ferent Auger coefficients into account is discussed. And the simulation results show that the wavelength-dependent efficiency droops is caused by sev- eral different effects including non-uniform carrier distrib- ution, electron overflow, built-in electrostatic field induced by spontaneous and piezoelectric polarization, and Auger loss.

TL;DR: In this article, the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs) are reviewed, and two types of VCSEL with different microcavity structures are described.