Journal ArticleDOI
Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
Shing-Chung Wang,Tien-Chang Lu,Chih Chiang Kao,Jong Tang Chu,Gen Sheng Huang,Hao-Chung Kuo,Shih-Wei Chen,Tsung-Ting Kao,Jun-Rong Chen,Li Fan Lin +9 more
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TLDR
In this article, the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs) are reviewed, and two types of VCSEL with different microcavity structures are described.Abstract:
We review the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs). Two types of VCSELs with different microcavity structures are described. First type of VCSEL has a hybrid microcavity structure that consists of an epitaxially grown AlN/GaN distributed Bragg reflector (DBR), a GaN active layer with InGaN/GaN multiple quantum wells (MQWs), and a Ta2O5/SiO2 dielectric DBR. Second type of VCSEL has a dielectric DBR microcavity structure that has a similar InGaN/GaN MQWs active layer sandwiched in two dielectric DBRs formed by Ta2O5/SiO2 and TiO2/SiO2. Both types of VCSELs achieved laser action under optical pumping at room temperature with emission wavelength of 448 and 414 nm for hybrid DBR VCSEL and dielectric DBR VCSEL, respectively. Both lasers showed narrow emission linewidth with high degree of polarization and large spontaneous emission coupling factors of about 10-2. In addition, a high characteristic temperature of over 240 K was measured, and a distinct spatially inhomogeneous emission pattern was observed.read more
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Journal ArticleDOI
Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
TL;DR: In this article, a GaN-based vertical-cavity surface-emitting laser (VCSEL) was demonstrated to operate at room temperature in an InGaN/GaN quantum well active layer.
Journal ArticleDOI
Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
Daiji Kasahara,Daisuke Morita,Takao Kosugi,Kyosuke Nakagawa,Jun Kawamata,Yu Higuchi,Hiroaki Matsumura,Takashi Mukai +7 more
TL;DR: In this article, the authors realized room-temperature lasing of blue and green GaN-based vertical-cavity surface-emitting lasers (VCSELs) by current injection.
Journal ArticleDOI
Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
Tien-Chang Lu,Shih-Wei Chen,Tzeng Tsong Wu,Po-Min Tu,Chien Kang Chen,Cheng-Huan Chen,Zhen-Yu Li,Hao-Chung Kuo,Shing-Chung Wang +8 more
TL;DR: In this article, the continuous wave laser action on GaN-based vertical cavity surface emitting laser at room temperature was demonstrated. But the laser structure consists of a ten-pair Ta2O5/SiO2 distributed Bragg reflector (DBR), a 7λ-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/ GaN DBR.
Journal ArticleDOI
Numerical investigation of V shaped three elements resonator for optical closed loop system
TL;DR: In this article, the authors have outlined numerical investigation of V shaped three element resonator and the stability parameter is measured against back mirror curvature radius, back mirror phase angle, focusing length, focusing mirror phase angles, folding range in both S plane and T plane.
Journal ArticleDOI
GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN /GaN distributed Bragg reflector
Tien-Chang Lu,Shih-Wei Chen,Li Fan Lin,Tsung-Ting Kao,Chih Chiang Kao,Peichen Yu,Hao-Chung Kuo,Shing-Chung Wang,Shanhui Fan +8 more
TL;DR: In this paper, a GaN-based two-dimensional surface-emitting photonic crystal (PC) laser with AlN∕GaN distributed Bragg reflectors is fabricated and demonstrated.
References
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Journal ArticleDOI
Condensation of Semiconductor Microcavity Exciton Polaritons
Hui Deng,Gregor Weihs,Gregor Weihs,Charles Santori,Jacqueline Bloch,Yoshihisa Yamamoto,Yoshihisa Yamamoto +6 more
TL;DR: A phase transition from a classical thermal mixed state to a quantum-mechanical pure state of exciton polaritons is observed in a GaAs multiple quantum-well microcavity from the decrease of the second-order coherence function.
Journal ArticleDOI
Efficient source of single photons: a single quantum dot in a micropost microcavity.
Matthew Pelton,Charles Santori,Jelena Vuckovic,Bingyang Zhang,Glenn S. Solomon,Jocelyn Plant,Yoshihisa Yamamoto +6 more
TL;DR: In this paper, a single semiconductor quantum dot was coupled to a three-dimensionalally confined optical mode in a micropost microcavity to produce triggered single photons, and the efficiency of emitting single photons into a single-mode traveling wave was approximately 38%.
Journal ArticleDOI
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
William S. Wong,Timothy D. Sands,Nathan W. Cheung,Michael Kneissl,David P. Bour,Ping Mei,Linda T. Romano,N. M. Johnson +7 more
TL;DR: In this paper, a thin-film InGaN MQW LED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive.
Journal ArticleDOI
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Eric Feltin,Bernard Beaumont,M. Laügt,P. de Mierry,Philippe Vennéguès,Hacene Lahreche,Mathieu Leroux,Pierre Gibart +7 more
TL;DR: In this article, the insertion of AlN/GaN superlattices was found to decrease the stress sufficiently for avoiding crack formation in an overgrown (2.5 μm) GaN layer.
Journal ArticleDOI
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
J. P. Zhang,Heyun Wang,M. E. Gaevski,Changqing Chen,Qhalid Fareed,J. W. Yang,Grigory Simin,M. Asif Khan +7 more
TL;DR: In this paper, an AlN/AlGaN superlattice approach was proposed to grow high-Al-content thick n+-alGaN layers over c-plane sapphire substrates.