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Wen-Feng Hsieh
Researcher at National Chiao Tung University
Publications - 245
Citations - 6036
Wen-Feng Hsieh is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Laser & Photoluminescence. The author has an hindex of 40, co-authored 245 publications receiving 5713 citations. Previous affiliations of Wen-Feng Hsieh include Industrial Technology Research Institute & National Cheng Kung University.
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Band gap variation of size-controlled ZnO quantum dots synthesized by sol-gel method
TL;DR: In this article, size-dependent blue shifts of photoluminescence and absorption spectra revealed the quantum confinement effect and the band gap enlargement was in agreement with the theoretical calculation based on the effective mass model.
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Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films
Shou-Yi Kuo,Wei Chun Chen,Fang-I Lai,Chin Pao Cheng,Hao-Chung Kuo,Shing-Chung Wang,Wen-Feng Hsieh +6 more
TL;DR: In this article, the effects of annealing temperature and dopant concentration on the structural and optical properties of ZnO:Al, AZO thin films have been discussed and the minimum sheet resistance of 10 4 ǫ/□ was obtained for the film doped with 1.6% Al, annealed at 750°C.
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Formation of Branched ZnO Nanowires from Solvothermal Method and Dye-Sensitized Solar Cells Applications
TL;DR: In this article, a branched ZnO nanowires have been fabricated on conductive glass substrates via a solvothermal method for dye-sensitized solar cells (DSCs).
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Size dependence of photoluminescence and resonant Raman scattering from ZnO quantum dots
TL;DR: The size dependence of electron-phonon coupling is principally a result of the Frohlich interaction as discussed by the authors, and the coupling strength between electron and longitudinal optical phonon, deduced from the ratio of the second-to-first-order Raman scattering intensity, diminishes with reducing the ZnO QD diameter.
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Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates.
TL;DR: From the temperature-dependent photoluminescence spectra, the activation energies of free and bound excitons are deduced and the Raman spectrum reveals the high quality of the ZnO nanowires.