J
Jun-Rong Chen
Researcher at National Chiao Tung University
Publications - 32
Citations - 786
Jun-Rong Chen is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Semiconductor laser theory & Light-emitting diode. The author has an hindex of 15, co-authored 32 publications receiving 747 citations. Previous affiliations of Jun-Rong Chen include National Changhua University of Education.
Papers
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Journal ArticleDOI
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
Shih Chun Ling,Tien-Chang Lu,Shih-Pang Chang,Shih-Pang Chang,Jun-Rong Chen,Hao-Chung Kuo,Shing-Chung Wang +6 more
TL;DR: In this paper, the authors investigated the electroluminescence and relatively external quantum efficiency of m-plane InGaN/GaN light emitting diodes (LEDs) emitting at 480 nm to elucidate the droop behaviors in nitride-based LEDs.
Journal ArticleDOI
Room temperature polariton lasing vs. photon lasing in a ZnO-based hybrid microcavity.
Tien-Chang Lu,Ying-Yu Lai,Yu-Pin Lan,Si Wei Huang,Jun-Rong Chen,Yung Chi Wu,Wen-Feng Hsieh,Hui Deng +7 more
TL;DR: Comparison between polariton lasing and photon lasing in a ZnO-based hybrid microcavity under optical pumping is done in terms of the linewidth broadening, blue-shift of the emission peak, and polarization.
Journal ArticleDOI
Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers
Jun-Rong Chen,Chung-Hsien Lee,Tsung-Shine Ko,Yi-An Chang,Tien-Chang Lu,Hao-Chung Kuo,Yen-Kuang Kuo,Shing-Chung Wang +7 more
TL;DR: In this article, the effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been numerically investigated by employing an advanced device-simulation program.
Journal ArticleDOI
Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes
Jun-Rong Chen,Yung Chi Wu,S. C. Ling,Tsung-Shine Ko,Tien-Chang Lu,Hao-Chung Kuo,Yen-Kuang Kuo,S. C. Wang +7 more
TL;DR: In this paper, the effect of Auger recombination loss on efficiency droop by taking dif- ferent Auger coefficients into account is discussed. And the simulation results show that the wavelength-dependent efficiency droops is caused by sev- eral different effects including non-uniform carrier distrib- ution, electron overflow, built-in electrostatic field induced by spontaneous and piezoelectric polarization, and Auger loss.
Journal ArticleDOI
Optically Pumped GaN-based Vertical Cavity Surface Emitting Lasers: Technology and Characteristics
Shing-Chung Wang,Tien-Chang Lu,Chih Chiang Kao,Jong Tang Chu,Gen Sheng Huang,Hao-Chung Kuo,Shih-Wei Chen,Tsung-Ting Kao,Jun-Rong Chen,Li Fan Lin +9 more
TL;DR: In this article, the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs) are reviewed, and two types of VCSEL with different microcavity structures are described.