Showing papers by "Junji Komeno published in 1983"
TL;DR: In this paper, a selectively doped InP/In0.53Ga0.47As heterostructure has been prepared by chloride transport vapor phase epitaxy, and Hall and Subnikov-de Haas measurements revealed the existence of a high mobility, two-dimensional electron gas at the interface of this heterostructured material, and enhanced electron mobilities were as high as 106'000, 71'200, and 9'400 cm2/Vs at 4.2, 77, and 300 K, respectively.
Abstract: A selectively doped InP/In0.53Ga0.47As heterostructure has been prepared by chloride transport vapor phase epitaxy. Hall and Subnikov‐de Haas measurements revealed the existence of a high mobility, two‐dimensional electron gas at the interface of this heterostructure. Enhanced electron mobilities were as high as 106 000, 71 200, and 9 400 cm2/Vs at 4.2, 77, and 300 K, respectively. These indicate the excellent interface properties of the selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy.
26 citations
TL;DR: In this article, the first successful growth of selectively doped In0.53Ga0.47As-InP hcterojunctions by the chloride vapour phase epitaxy was reported, with a maximum electron mobility of 106 000 cm2 V?1 s?1 at 4.2 K.
Abstract: We report the first successful growth of selectively doped In0.53Ga0.47As-InP hcterojunctions by the chloride vapour phase epitaxy, and the observation of TDEG with a maximum electron mobility of 106 000 cm2 V?1 s?1 at 4.2 K.
22 citations
TL;DR: In this article, a new multiquantum well system, InP-InGaAs-InP, has been grown by the chloride transport vapor phase epitaxy, and the Auger measurements show that a very sharp InGaAs−InP heterointerface (less than 30 A) can be obtained by the present growth system.
Abstract: A new multiquantum well system, InP–InGaAs–InP, has been grown by the chloride transport vapor phase epitaxy. The Auger measurements show that a very sharp InGaAs–InP heterointerface (less than 30 A) can be obtained by the present growth system. Optical absorption and photoluminescence measurements give the evidence for the formation of the quantum wells in InGaAs layers. Temperature dependence of photoluminescence indicates that the dominant emission at low temperatures is interpreted as the band‐to‐acceptor transition. It also shows that temperature dependence of the transition energy from hole subband to electron subband is apparently affected by the thickness of the quantum well. Two models are presented for this. One takes into account the localized phonons in the InGaAs–InP heterointerface region whose frequency is higher than that in the bulk samples. The other considers the difference in the thermal expansion coefficients of InGaAs and InP, which reduces a shift of the [000] conduction band minimu...
19 citations
TL;DR: In this article, InGaAs-InP superlattices have been successfully grown by the chloride transport vapor phase epitaxy (chloride VpE), and the thickness of the heterointerface region was measured by Auger electron spectroscopy, and was determined to be less than 30 E.
Abstract: In6.53Gag.47As-InP superlattices have been successfully grown by the chloride transport vapor phase epitaxy (chloride VpE). The grown superlattices were evaluated by several measurements. The thickness of the heterointerface region was measured by Auger electron spectroscopy, and is determined to be less than 30 E. X-ray measurements show satellite diffractions which demonstrate uniformity in period of the superIattice. optical absorption and photoluminescence measurements give the evj-dence for the formation of the quantum wells in InGaAs layers.
1 citations