J
Jurgen H. Smet
Researcher at Max Planck Society
Publications - 240
Citations - 13324
Jurgen H. Smet is an academic researcher from Max Planck Society. The author has contributed to research in topics: Electron & Quantum Hall effect. The author has an hindex of 53, co-authored 233 publications receiving 11894 citations. Previous affiliations of Jurgen H. Smet include Harvard University & Weizmann Institute of Science.
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Journal ArticleDOI
Observation of electron–hole puddles in graphene using a scanning single-electron transistor
Jens Martin,Nitzan Akerman,G. Ulbricht,Timm Lohmann,Jurgen H. Smet,K. von Klitzing,Amir Yacoby,Amir Yacoby +7 more
TL;DR: In this article, a scanning single-electron transistor is used to map the local density of states and the carrier density landscape in the vicinity of the neutrality point, and it is shown that electron-hole puddles can be quantitatively accounted for by considering noninteracting electrons and holes.
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Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures
Ramesh G. Mani,Ramesh G. Mani,Jurgen H. Smet,Klaus von Klitzing,Venkatesh Narayanamurti,William B. Johnson,Vladimir Umansky +6 more
TL;DR: The results suggest an unexpected radiation-induced, electronic-state-transition in the GaAs/AlGaAs 2DES, which exhibits vanishing diagonal resistance without Hall resistance quantization at low temperatures and low magnetic fields when the specimen is subjected to electromagnetic wave excitation.
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Graphene on a Hydrophobic Substrate: Doping Reduction and Hysteresis Suppression under Ambient Conditions
Myrsini Lafkioti,Benjamin Krauss,Timm Lohmann,Ute Zschieschang,Hagen Klauk,Klaus von Klitzing,Jurgen H. Smet +6 more
TL;DR: It is demonstrated that it is possible to reliably obtain low intrinsic doping levels and to strongly suppress hysteretic behavior even in ambient air by depositing graphene on top of a thin, hydrophobic self-assembled layer of hexamethyldisilazane (HMDS).
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Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping
Camilla Coletti,C. Riedl,Dong Su Lee,Benjamin Krauss,L. Patthey,K. von Klitzing,Jurgen H. Smet,Ulrich Starke +7 more
TL;DR: In this paper, the authors demonstrate that the excess negative charge can be fully compensated by noncovalently functionalizing graphene with the strong electron-acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ) charge transfer complex.
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Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2
TL;DR: A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate, and the broadened 2D peak however stems from the graphene structure itself and not from the substrate.