Jürgen H. Werner

TL;DR: In this article, a universal passivation for both, phosphorus and boron doped surfaces of interdigitated back contact solar cells is presented. And the amorphous silicon layer enables saturation current densities J o,em = 46 fA/cm 2 for laser doped p ++ borón emitters with sheet resistance R sh,m = 90Ω/sq as well as J o o,bsf = 73 fA /cm2 for laser Doped n ++ phosphorus back surface fields with R sh,bsf °=°36°�

TL;DR: The first realization of a pure Germanium bulk vertical Tunneling Field Effect Transistor (vTFET) and a high Ion/Ioff ratio for a pure Silicon bulk vTFET are both reported in this paper.

TL;DR: In this article, the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed, and it is shown that depending on the chosen operating point and device design, the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

TL;DR: In this article, the authors investigated the influence of the boron surface segregation effects on the peak current density of silicon Esaki diodes, and found good peak to valley current ratios in excess of 3 and excellent peak current densities up to 5.2

TL;DR: A new and simple laser-based process to porosify thin film silicon using a pulsed laser to tailor the pore size between 50 and 550 nm by changing laser pulse energy density and film deposition parameters is presented.