Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.

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Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

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Methods to manipulate the magnetization of ferromagnets by means of local electric fields or current-induced spin transfer torque allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuation. An alternative way to induce a spin torque using an electric current has been proposed based on intrinsic spin-orbit magnetic fields and recently realized in a strained low-temperature ferromagnetic semiconductor. Here we demonstrate that strong magnetic fields can be induced in ferromagnetic metal films lacking structure inversion symmetry through the Rashba effect. Owing to the combination of spin-orbit and exchange interactions, we show that an electric current flowing in the plane of a Co layer with asymmetric Pt and AlO(x) interfaces produces an effective transverse magnetic field of 1 T per 10(8) A cm(-2). Besides its fundamental significance, the high efficiency of this process makes it a realistic candidate for room-temperature spintronic applications.

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Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer

A M was supported by the King Abdullah University of Science and Technology (KAUST) T J acknowledges support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin, and the Grant Agency of the Czech Republic Grant No 19-28375X J S acknowledges the Alexander von Humboldt Foundation, EU FET Open Grant No 766566, EU ERC Synergy Grant No 610115, and the Transregional Collaborative Research Center (SFB/TRR) 173 SPIN+X K G and P G acknowledge stimulating discussions with C O Avci and financial support by the Swiss National Science Foundation (Grants No 200021-153404 and No 200020-172775) and the European Commission under the Seventh Framework Program (spOt project, Grant No 318144) A T acknowledges support by the Agence Nationale de la Recherche, Project No ANR-17-CE24-0025 (TopSky) J Ž acknowledges the Grant Agency of the Czech Republic Grant No 19-18623Y and support from the Institute of Physics of the Czech Academy of Sciences and the Max Planck Society through the Max Planck Partner Group programme

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Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Preface. Contents of volumes 1-6. 1. Magnetism in ultrathin transition metal films (U. Gradmann). 2. Energy band theory of metallic magnetism in the elements (V.L. Moruzzi, P.M. Marcus). 3. Density functional theory of the ground state magnetic properties of rare earths and actinides (M.S.S. Brooks, B. Johansson). 4. Diluted magnetic semiconductors (J. Kossut, W. Dobrowolski). 5. Magnetic properties of binary rare-earth 3d-transition-metal intermetallic compounds (J.J.M. Franse, R.J. Radwanski). 6. Neutron scattering on heavy fermion and valence fluctuation 4f-systems (M. Loewenhaupt, K.H. Fischer). Author index. Subject index. Materials index.

Handbook of Magnetic Materials

Exchange-split two-dimensional electronic states at the magnetic Gd(0001) surface change their energy dispersion upon magnetization reversal owing to the Rashba effect. The Rashba parameter is found to be substantially enhanced and to change sign when an epitaxial metal-oxide surface layer is formed. The experimental observations are quantitatively described by ab initio calculations giving a detailed account of the near-surface charge-density gradients that are responsible for the Rashba effect.

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Rashba effect at magnetic metal surfaces

For a fundamental understanding of ultrafast dynamics in chemistry, biology and materials science it has been a long-standing dream to record a molecular movie in which both the atomic trajectories and the chemical states of every atom in matter are followed in real time1. Free-electron lasers provide this perspective as they deliver brilliant femtosecond X-ray pulses spanning a wide photon energy range, which is necessary to gather element-specific and chemical-state-selective information with femtosecond time resolution. The key challenge lies in synchronizing the free-electron lasers with separate optical lasers. We exploit the peak brilliance of the free-electron laser in Hamburg2,3 (FLASH) and establish X-ray- pulse-induced transient changes of the optical reflectivity in GaAs as a powerful tool for X-ray/optical cross-correlation. This constitutes a breakthrough in the path towards recording a molecular movie and—equally importantly—opens up the field of femtosecond X-ray-induced dynamics, only accessible with high-brilliance X-ray free-electron lasers.

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A femtosecond X-ray/optical cross-correlator

We have performed core level photoelectron spectroscopy on a W(110) single crystal with femtosecond XUV pulses from the free-electron laser at Hamburg (FLASH). We demonstrate experimentally and through theoretical modelling that for a suitable range of photon fluences per pulse, time-resolved photoemission experiments on solid surfaces are possible. Using FLASH pulses in combination with a synchronized optical laser, we have performed femtosecond time-resolved core-level photoelectron spectroscopy and observed sideband formation on the W 4f lines indicating a cross correlation between femtosecond optical and XUV pulses.

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Towards time resolved core level photoelectron spectroscopy with femtosecond x-ray free-electron lasers

We present a table top setup for time- and angle-resolved photoelectron spectroscopy to investigate band structure dynamics of correlated materials driven far from equilibrium by femtosecond laser pulse excitation. With the electron-phonon equilibration time being in the order of 1–2 ps it is necessary to achieve sub-picosecond time resolution. Few techniques provide both the necessary time and energy resolution to map non-equilibrium states of the band structure. Laser-driven high-order harmonic generation is such a technique. In our experiment, a grating monochromator delivers tunable photon energies up to 40 eV. A photon energy bandwidth of 150 meV and a pulse duration of 100 fs FWHM allow us to cover the k-space necessary to map valence bands at different kz and detect outer core states.

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A high-order harmonic generation apparatus for time- and angle-resolved photoelectron spectroscopy

The temporal evolution of the exchange-split Δ(2)-like Σ valence bands of the 4f-ferromagnet gadolinium after femtosecond laser excitation has been studied using angle-resolved photoelectron spectroscopy based on high-order harmonic generation. The ultrafast drop of the exchange splitting reflects the magnetic response seen in femtosecond magnetic dichroism experiments. However, while the minority valence band reacts immediately, the response of the majority counterpart is delayed by 1 picosecond and is only half as fast. These findings demonstrate that laser excitation drives the valence band structure out of magnetic equilibrium.

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K. M. Döbrich

Papers

Rashba effect at magnetic metal surfaces

A femtosecond X-ray/optical cross-correlator

Towards time resolved core level photoelectron spectroscopy with femtosecond x-ray free-electron lasers

A high-order harmonic generation apparatus for time- and angle-resolved photoelectron spectroscopy

Femtosecond laser excitation drives ferromagnetic gadolinium out of magnetic equilibrium.