It was found that at low currents and low fields the steady-state forward postswitching curve of a silicon diode at low temperatures (below 15K) could be represented approximately by logI approximately=A+CV-B2( alpha sin2 theta + beta sin4 theta ) where I is the current, V the voltage, theta is the angle between the direction of current flow and the magnetic field B, and A, C, alpha and beta are constants. A simple filament model with enhanced surface recombination is used to explain the results.

https://iopscience.iop.org/article/10.1088/0022-3727/8/1/014/pdf

An investigation of the effect of a magnetic field on the forward characteristics of some silicon diodes at low temperatures

Measurements are reported for the variation of the forward characteristics of the IN4001-5 series of silicon diodes with temperature and magnetic field. At low temperatures (

On the behaviour of forward biased silicon diodes at low temperatures

The behavior of a current filament in a gold‐doped p+‐n Si diode was studied under a transverse magnetic field. The probe technique of electric potential was applied to measure the current distribution of the filament. By the action of the magnetic field, the filament was deformed and deflected toward one side of the diode. Moreover, a new ``filament instability'' which generates oscillation phenomena in the diode was observed.

Effect of magnetic field on current filament in gold‐doped silicon

Dynamic negative resistances observed in p‐n InSb diodes reverse biased at 77 °K are described. The diodes were made by zinc diffusion on the antimony side of n‐type InSb wafers at 450 °C for 6 h. Coherent current pulse trains of a small duty cycle, with current pulses of amplitude 0.17 A and rise time 0.5 nsec and with great voltage drops, are generated in such a negative‐resistance region which is associated with deep‐level states produced by the above zinc diffusion treatment.

Negative resistances observed in InSb diodes reverse biased

In n+–p–p+ structures made of p-InSb a negative differential resistivity region (NDR) is observed in the current-voltage characteristics at 77 K. In this NDR region, oscillations of the voltage drop, under constant current conditions, can occur which are most pronounced in magnetic fields of some 10 G. Their frequency is of the order of 10 kHz. It could be shown experimentally that the oscillations occur simultaneously over the whole length of the sample and that they are due to radial oscillations of a plasma channel which are caused by trapping and recombination of injected carriers.



In n+–p–p+-Strukturen von p-leitendem InSb wird ein negativer differentieller Widerstandsbereich (NDR) in den Strom-Spannungscharakteristiken bei 77 K beobachtet. In diesem NDR-Bereich konnen unter der Bedingung konstanten Stromes Oszillationen des Spannungsabfalls auftreten, die bei Magnetfeldern von einigen 10 G am ausgepragtesten sind. Ihre Frequenz ist von der Grosenordnung 10 kHz. Es wird experimentell nachgewiesen, das die Oszillationen gleichzeitig uber die gesamte Probenlange auftreten und das sie durch radiale Oszillationen eines Plasmakanals hervorgerufen werden, die durch Trapping und Rekombination von injizierten Ladungstragern verursacht werden.

Oscillations of injected carriers in p-type indium antimonide

Properties of low‐density injected plasma in p‐InSb have been studied. Measurements have been made on n+‐p‐p+ diodes biased in the forward direction at 77°K. The time dependent behavior of the I‐V characteristics has been measured by application of dc pulses, with and without a transverse magnetic field present. At short periods after applying the pulses, or at low injection levels, the current is carried mainly by holes in the major part of the sample. At long periods after applying the pulses and at high injection levels the shape of the I‐V characteristics is governed by the injected plasma, and a steady state is reached within about 10 μsec. In a transverse magnetic field the plasma is deflected by the Suhl effect towards the surface. There the electrons and holes recombine at a high rate. This mechanism reduces the number of carriers which contribute to conduction. At a magnetic field of about 300 G the I‐V curves have a similar shape as the ones measured at a short period after applying the pulse. T...

K. Merinsky

Papers

Low‐Density Injected Plasma in p‐Type Indium Antimonide

Oscillations of injected carriers in p-type indium antimonide