Handbook of thin film technology

Indium oxide thin films have been prepared by thermal oxidation of vacuum‐deposited indium thin films in air in an open furnace at about 600 K. These indium oxide thin films prepared by thermal oxidation have been examined for optical transparency by measuring their optical absorbance as a function of wavelength. From the optical absorption data, optical band gap and the nature of the forbidden energy gap in the indium oxide thin films have been determined. Electrical conductivity measurements have also been carried out on the above oxide films as a function of temperature during heating and cooling cycles in vacuum. It is found that after the first heating, electrical conductivity increases to a significant extent due to removal of point defect clusters due to annealing which contribute to both carrier generation and scattering. From the thermoelectric power measurements carried out, it has been concluded that electrons are the majority carriers in these indium oxide thin films.

Optical and electrical investigations of indium oxide thin films prepared by thermal oxidation of indium thin films

A novel chemical approach was demonstrated for the growth of high-quality, silver films by CVD. This concept relies on the catalytic reactivity of cationic silver, and of silver surfaces with alcohols. This leads to high-purity films using either state-of-the-art precursors or silver salts that have not been yet considered as CVD precursors. The occurrence of the catalytic oxidative-dehvdrogenation of alcohols, considered as the driving force in this process, was shown by in-situ mass spectrometry (MS). Films of fcc-Ag with p <= 2 mu Omega cm were grown without any noticeable contamination. Ag(hfac)COD leads to the growth of a (111) highly orientated film on glass at a rate of 1.66 nm min(-1), while polycrystalline films are grown at a rate of 18.5 run min(-1) using AgNO3.

Alcohol-Assisted CVD of Silver Using Commercially Available Precursors

The complex [Ag3{(SPiPr2)6N3}]2 has been synthesised by the reaction of sodium dithioimidodiphosphinate salt with silver nitrate in anhydrous methanol. Single crystal X-ray diffraction studys showed that the unit cell contains two independent trimeric molecules [Ag{(SPiPr2)2N}]3 and [Ag{(SPiPr2)2N}]3·CHCl3; the former adopting a chair conformation and the later a half-chair conformation. Aerosol assisted chemical vapour deposition (AACVD) from this precursor gave a mixture of silver sulfide and silver thin films or pure silver films depending upon the deposition temperature. As-deposited films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and ultra-violet/visible (UV/Vis) spectroscopy.

The CVD of silver sulfide and silver thin films from a homoleptic crystalline single-source precursor

Highly conductive indium oxide thin films (ρ=5×10−3 Ω cm) have been prepared by thermal oxidation in an open atmosphere of indium films deposited in vacuum by evaporation. The rate of indium film deposition was high (5 A s−1), and the oxidation has been carried out by exposing the samples to the atmosphere directly at high temperature (500°C) for different times. Structural, optical and electrical properties of these samples were investigated. Films exhibit a (111) preferred orientation, The value of the transmittance coefficient in the visible region of the spectrum was low (50%) but, concerning the electrical properties, an interesting behaviour was observed: at temperatures above room temperature the electrical resistance depends on the sense of the electrical current flow.

The influence of preparation conditions on the electrical and optical properties of oxidized indium thin films

Thickness dependence of defect density in silver films

Annealing study of the electrical resistivity and defect density in silver films

Silver films (thickness ≈ 540 A) are deposited with different deposition rates by thermal evaporation in vacuum (2 × 10−5 Torr) on well cleaned glass substrates. The films are subjected to constant rates of heat treatment and the variations of electrical resistance with temperature are observed. From the resistance versus temperature plots, the variations of defect density with activation energy are calculated. It is found that the defect density F0(E)max and the activation energy Emax increase with the increase of deposition rate. The results are explained from the sheet resistance estimated prior to heat treatment.



Silberschichten (Dicke ≈ 540 A) werden mit verschiedenen Raten durch thermische Verdampfung im Vakuum (2 × 10−5 Torr) auf gut gereinigten Glassubstraten aufgebracht. Die Schichten werden einer konstanten Warmebehandlung ausgesetzt, wobei die Anderungen des elektrischen Widerstands mit der Temperatur gemessen werden. Aus den Widerstands–Temperatur-Kurven wird die Anderung der Defektdichte mit der Aktivierungsenergie berechnet. Es wird gefunden, das die Defektdichte F0(E)max und die Aktivierungsenergie Emax mit zunehmender Aufdampfrate ansteigen. Die Ergebnisse werden mit dem Schichtwiderstand vor der Temperung erklart.

Dependence of defect density and activation energy on deposition rates in silver films

Copper films (210 &#8211; 1650 &#8491;) were deposited onto glass microslides by vacuum evaporation. The films were subjected to heat treatment at a constant rate and the variation of electrical resistance with temperature was measured. The defect density and activation energy were calculated for different thicknesses from the knowledge of the change in electrical resistance with temperature and time. The defect density, F0 (E)max, varies from 17.2 to 6.05 &#x03BC;&#x03A9;&#x2022;cm eV&#8722;1 in the thickness range 210 &#8211; 1650 &#8491; whereas no appreciable variation in the activation energy is observed.

https://downloads.hindawi.com/journals/apec/1982/143696.pdf

K. Narayandas

Papers

Thickness dependence of defect density in silver films

Annealing study of the electrical resistivity and defect density in silver films

Dependence of defect density and activation energy on deposition rates in silver films

Defect density and electrical properties of vacuum evaporated copper films from annealing studies of electrical resistance

Dependence of defect density and activation energy on deposition rates in copper films