K
K. Sankaranarayanan
Researcher at Sri Ramakrishna Institute of Technology
Publications - 20
Citations - 278
K. Sankaranarayanan is an academic researcher from Sri Ramakrishna Institute of Technology. The author has contributed to research in topics: Variable structure system & Control theory. The author has an hindex of 7, co-authored 20 publications receiving 241 citations.
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Variable structure fuzzy gain scheduling based load frequency controller for multi source multi area hydro thermal system
TL;DR: In this article, variable structure fuzzy gain scheduling is proposed for solving the load frequency control problem of multi-source multi-area hydro thermal power system, where two control areas are connected via tie line.
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Load Frequency Control of Multi-source Multi-area Hydro Thermal System Using Flexible Alternating Current Transmission System Devices
TL;DR: In this article, the secondary proportional-integral controller has been tuned using Ziegler-Nichols, genetic algorithm, and fuzzy gain scheduling methods for a multi-source multi-area hydro thermal system.
IPv4/IPv6 Transition Mechanisms
TL;DR: The measured latency and throughput of the ipv6 to ipv4 mechanism are better than those of the configured tunnel and tunnel broker mechanisms, but the ipV6 toipv 4 mechanism must work much harder (greater overhead) for each packet sent, and it must therefore run at a higher CPU utilization of the edge router.
Journal ArticleDOI
Detection of Oral Tumor based on Marker – Controlled Watershed Algorithm
K. Anuradha,K. Sankaranarayanan +1 more
TL;DR: A novel mathematical morphological watershed algorithm is proposed to preserve edge details as well as prominent ones to identify tumors in dental radiographs to detect cancers present in mouth provided by an Orthopantomogram.
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2D Transconductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOI MOSFETs
TL;DR: This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs and is a better criterion to access the performance of a device than the transconductance.