Characterization of growth of anodic antimony oxide films by ellipsometry and XPS

Preparation and characterization of tungsten diselenide thin films

MoSe2 coatings were obtained by solid state reaction, induced by annealing, between the Mo and Se constituents in thin films form. The films have been investigated by X ray analysis, XPS analysis, scanning electron microscopy, electron microprobe analysis, optical absorption and electrical resistivity measurements. It was found that, while the films are stoichiometrics, MoSe2 in the hexagonal form was difficult to obtain even at temperature as high as 850 K. However thin films annealed under selenium pressure at only 770 K are well crystallized. The electrical resistivity is governed by hopping conduction in the low temperature range (80- 200 K) and by grain boundary scattering mechanisms at higher temperature.

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MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films

Structural and optical properties of thin films CuInS2 grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The depositions were carried out at substrate temperatures in the range 65-295 °C. We obtain CuInS2 layers with high structural quality by growing at Ts 140 °C with the presence of an amorphous component and at Ts 240 °C with formation of In and Cu7 In4 as minority phases. From the optical transmission and reflection an optical absorption coefficient of 3 × 104 -105 cm-1 for 200 °C. Analysis of the absorption coefficient data revealed the existence of several energy gaps, direct and forbidden direct gaps. The direct gaps lie between 1.38 and 2.20 eV and the forbidden direct gaps are in the 0.61-1.97 eV range. The effect of the substrate temperatures on the grain size and surface roughness has been studied. It has been shown that the substrate temperatures Ts 140 °C and Ts 240 °C yield maxima of the grain size and minima of the surface roughness.

https://iopscience.iop.org/article/10.1088/0268-1242/15/4/306/pdf

Effect of deposition temperature on the optical and structural properties of as-deposited CuInS2 films

Effect of deposition and annealing parameters on the properties of electrodeposited CuIn1−xGaxSe2 thin films

Electrical conductivity and optical absorption in flash-evaporated CuInTe2 thin films

Growth of dielectric layers on the InSb surface

In the present paper indium and antimony self‐diffusion was studied in the temperature range 400–500 °C in single crystals of indium antimonide. The crystals were grown by the Bridgman technique. The radioactive tracer diffusion method was employed using In114m and Sb125 isotopes. Anodic oxidation technique was developed and used for serial sectioning. The penetration profiles were fitted to the error function solution of diffusion equations. For indium self‐diffusion, the activation energy and pre‐exponential factor were found to be 1.45 eV and 6.0×10−7 cm2/s, respectively, while for antimony diffusion the activation energy was obtained as 1.91 eV with a pre‐exponential factor of 5.35×10−4 cm2/s. The results were compared with the earlier experimental studies and theoretical calculations. The migration enthalpies of indium and antimony atoms are estimated to be 0.66 and 0.70 eV, respectively. The corresponding formation enthalpies are 0.79 eV for In vacancy and 1.21 eV for Sb vacancy formation.

K.V. Reddy

Papers

Electrical conductivity and optical absorption in flash-evaporated CuInTe2 thin films

Growth of dielectric layers on the InSb surface

Self‐diffusion in indium antimonide

Electromigration in thin solid films