K
K. W. Baldwin
Researcher at AT&T Corporation
Publications - 42
Citations - 1421
K. W. Baldwin is an academic researcher from AT&T Corporation. The author has contributed to research in topics: Quantum Hall effect & Landau quantization. The author has an hindex of 16, co-authored 42 publications receiving 1372 citations.
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Electron mobilities exceeding 107 cm2/V s in modulation‐doped GaAs
TL;DR: A modulation-doped Al0.35Ga0.65As/GaAs single interface structure with a 700 A undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K as mentioned in this paper.
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Formation of a high quality two-dimensional electron gas on cleaved GaAs
Loren Pfeiffer,Ken W. West,Horst Stormer,J. P. Eisenstein,K. W. Baldwin,David Gershoni,J. Spector +6 more
TL;DR: In this article, a two-dimensional electron gas (2DEG) was fabricated on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE).
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Electron focusing in two‐dimensional systems by means of an electrostatic lens
TL;DR: In this article, an electrostatic lens for ballistic electrons in two-dimensional (2D) systems was introduced and demonstrated its focusing action in very high mobility GaAs•(AlGa)As heterostructures.
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Atomically precise superlattice potential imposed on a two-dimensional electron gas
TL;DR: In this paper, a two-dimensional electron gas containing an atomically precise, lateral Kronig-Penney potential of 102 A periodicity was fabricated by modulation-doped molecular beam epitaxy overgrowth on the cleaved edge of a 71 A GaAs/31 A AlGaAs compositional superlattice.
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2D-1D coupling in cleaved edge overgrowth
TL;DR: In this paper, the scattering properties of an interface between a one-dimensional wire and a two-dimensional electron gas were studied in the highly controlled geometry provided by molecular bean epitaxy overgrowth onto the cleaved edge of a high quality GaAs/AlGaAs quantum well.