K
Karda Kamal M
Researcher at Micron Technology
Publications - 79
Citations - 515
Karda Kamal M is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & Body region. The author has an hindex of 11, co-authored 79 publications receiving 485 citations. Previous affiliations of Karda Kamal M include University of Notre Dame & Purdue University.
Papers
More filters
Journal ArticleDOI
Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Debdeep Jena,John Simon,Albert,Wang,Yu Cao,Kevin Goodman,Jai Verma,Satyaki Ganguly,Guowang Li,Karda Kamal M,Vladimir Protasenko,Chuanxin Lian,Thomas H. Kosel,Patrick Fay,Huili Xing +14 more
TL;DR: The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed in this paper, as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides.
Journal ArticleDOI
Polarization-engineering in group III-nitride heterostructures: New opportunities for device design
Debdeep Jena,John Simon,Albert Kejia Wang,Yu Cao,Kevin Goodman,Jai Verma,Satyaki Ganguly,Guowang Li,Karda Kamal M,Vladimir Protasenko,Chuanxin Lian,Thomas H. Kosel,Patrick Fay,Huili Xing +13 more
TL;DR: The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed in this paper, as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides.
Patent
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transistors
TL;DR: In this article, a vertical ferroelectric field effect transistor construction comprises an isolating core, a transition metal dichalcogenide material encircles the isolator, and a conductive contact is directly against a lateral outer sidewall of the transition metal gate material that is either elevationally inward or elevationally outward of the conductive gate material.
Journal ArticleDOI
An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
TL;DR: In this paper, the authors propose to replace the classical gate insulator with dielectrics that exhibit negative capacitance associated with double-well energy landscape, for example, ferroelectrics (FE), air-gap capacitors, or a combination thereof.
Proceedings ArticleDOI
Process integration of a 27nm, 16Gb Cu ReRAM
John K. Zahurak,Koji Miyata,Mark Fischer,Murali Balakrishnan,Chhajed Sameer,David H. Wells,Hong Li,Alessandro Torsi,Jay Lim,Mark S. Korber,Keiichi Nakazawa,Satoru Mayuzumi,Motonari Honda,Scott E. Sills,Shuichiro Yasuda,Alessandro Calderoni,Beth R. Cook,Gowri Damarla,Hai Tran,Bei Wang,Chris Cardon,Karda Kamal M,Jun Okuno,Adam Johnson,Takafumi Kunihiro,Jun Sumino,Masanori Tsukamoto,Katsuhisa Aratani,Nirmal Ramaswamy,Wataru Otsuka,Kirk D. Prall +30 more
TL;DR: In this article, a 27nm 16Gb Cu-based NV Re-RAM chip has been demonstrated, which includes Damascene Cell, Line-SAC Digit Lines filled with Cu, exhumed-silicided array contacts, raised epitaxial arrays, and high-drive buried access devices.