Karl D. Hirschman

TL;DR: In this article, the authors demonstrate the successful integration of silicon-based visible light-emitting devices into a standard bipolar microelectronic circuit by exploiting the thermal and chemical stability of porous silicon.

TL;DR: In this paper, the size of the Si nanocrystals is limited by the thickness of the a-Si layer, the shape is nearly spherical, and the orientation is random.

TL;DR: In this article, an empirical model that takes into account the Si layer thickness, the Si/SiO2 interface range, and a material specific constant has been developed, and the origin of the strain in the crystallized structure is discussed.

TL;DR: A complete process compatible with conventional Si technology has been developed in order to produce a bipolar light-emitting device as mentioned in this paper, which consists of a layer of light emitting porous silicon annealed at high temperature (800-900 C) sandwiched between a p-type Si wafer and a highly doped polycrystalline Si film.

TL;DR: In this article, a 3D porous silicon p±n diode was constructed to form the basis of a novel be-tavoltaic battery using tritium to demonstrate the proof-of-concept, the 3D diode geometry demonstrated a tenfold enhancement of efficiency compared to that of the usual 2D planar diode structure.