Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

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Silicon optical modulators

The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. RD however, lasing has not yet been attained. The new paradigm for the Si-based photonic and optoelectric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of 1.2-100 mum, with cryocooling needed in some cases

The Past, Present, and Future of Silicon Photonics

The nonlinearities in silicon are diverse. This Review covers the wealth of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics. The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.

Nonlinear silicon photonics

Integrated optical circuits based on silicon-on-insulator technology are likely to become the mainstay of the photonics industry. Over recent years an impressive range of silicon-on-insulator devices has been realized, including waveguides1,2, filters3,4 and photonic-crystal devices5. However, silicon-based all-optical switching is still challenging owing to the slow dynamics of two-photon generated free carriers. Here we show that silicon–organic hybrid integration overcomes such intrinsic limitations by combining the best of two worlds, using mature CMOS processing to fabricate the waveguide, and molecular beam deposition to cover it with organic molecules that efficiently mediate all-optical interaction without introducing significant absorption. We fabricate a 4-mm-long silicon–organic hybrid waveguide with a record nonlinearity coefficient of γ ≈ 1 × 105 W−1 km−1 and perform all-optical demultiplexing of 170.8 Gb s−1 to 42.7 Gb s−1. This is—to the best of our knowledge—the fastest silicon photonic optical signal processing demonstrated. A silicon–organic hybrid slot waveguide with a strong optical nonlinearity is demonstrated to perform ultrafast all-optical demultiplexing of high-bit-rate data streams. The approach could form the basis of compact high-speed optical processing units for future communication networks.

/pdf/all-optical-high-speed-signal-processing-with-silicon-2nxlva6l54.pdf

All-optical high-speed signal processing with silicon–organic hybrid slot waveguides

The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.

Organic photonics for communications

Although gigahertz-scale free-carrier modulators have been demonstrated in silicon, intensity modulators operating at terahertz speeds have not been reported because of silicon's weak ultrafast nonlinearity. We have demonstrated intensity modulation of light with light in a silicon–polymer waveguide device, based on the all-optical Kerr effect—the ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the mechanism of this modulation is ultrafast through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained. By integrating optical polymers through evanescent coupling to silicon waveguides, we greatly increase the effective nonlinearity of the waveguide, allowing operation at continuous-wave power levels compatible with telecommunication systems. These devices are a first step in the development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.

https://depts.washington.edu/eooptic/files/Nature_Materials_2006_5(9)_703.pdf

Terahertz all-optical modulation in a silicon–polymer hybrid system

Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the ultrafast mechanism of this modulation functions at the optical frequency through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained in this device. By integrating optical polymers through evanescent coupling to high-mode-confinement silicon waveguides, we greatly increase the effective nonlinearity of the waveguide for cross-phase modulation. The combination of high mode confinement, multiple integrated optical components, and high nonlinearities produces all-optical ultrafast devices operating at continuous-wave power levels compatible with telecommunication systems. Although far from commercial radio frequency optical modulator standards in terms of extinction, these devices are a first step in development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.

Katherine Harvard

Papers

Terahertz all-optical modulation in a silicon–polymer hybrid system

Terahertz All-Optical Modulation in a Silicon-Polymer Hybrid System