Patent
Gallium nitride group compound semiconductor laser diode
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TLDR
The improved gallium nitride group compound semiconductor laser diode of the present invention was found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions as mentioned in this paper.Abstract:
A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Alx Ga1-x)y In1-y N (where 0≦x≦1 and 0≦y≦1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Alx' Ga1-x')y' In1-y' N (where 0≦x'≦1, 0≦y'≦1, x=x' or x≠x', and, y=y' or y≠y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.read more
Citations
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References
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Journal ArticleDOI
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
TL;DR: In this article, low resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time, and the resistivity, hole carrier concentration and hole mobility became 2 Ωcm, 3×1017/cm3 and 10 cm2/Vs, respectively.
Patent
Light-emitting gallium nitride-based compound semiconductor device
TL;DR: In this paper, a light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is presented, which includes a lightemitting layer formed of a low-resistivity In x Ga 1-x N (0
Journal ArticleDOI
Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
TL;DR: In this paper, the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer was reported.
Patent
Gallium nitride compound semiconductor light-emitting element
Shuji Nakamura,修二 中村 +1 more
TL;DR: In this article, the performance of a nitride semiconductor light emitting element is improved by placing a light-emitting element in double hetero structure which has, between a substrate and an active layer, an n-type gallium nitride compound semiconductor layer having such structure that it can lighten a crystal defect.
Patent
Process of vapor growth of gallium nitride and its apparatus
TL;DR: In this paper, a process and apparatus for the growth of a gallium nitride group semiconductor (Alx Ga1-x N; inclusive of x=0) thin film using an organometallic compound gas is described.