K
Kazim G. Polat
Researcher at University of California, Davis
Publications - 7
Citations - 233
Kazim G. Polat is an academic researcher from University of California, Davis. The author has contributed to research in topics: Photodiode & Quantum efficiency. The author has an hindex of 4, co-authored 7 publications receiving 150 citations. Previous affiliations of Kazim G. Polat include University of California.
Papers
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Journal ArticleDOI
Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes
Yang Gao,Hilal Cansizoglu,Kazim G. Polat,Soroush Ghandiparsi,Ahmet Kaya,Hasina H. Mamtaz,Ahmed S. Mayet,Yinan Wang,Xinzhi Zhang,Toshishige Yamada,Ekaterina Ponizovskaya Devine,Aly F. Elrefaie,Shih-Yuan Wang,M. Saif Islam +13 more
TL;DR: In this article, micro-and nanoscale holes enabling light trapping in a silicon photodiode are exploited to improve the speed and efficiency of silicon photodiodes with intrinsic layers less than 2 μm.
Journal ArticleDOI
Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm
Hilal Cansizoglu,Cesar Bartolo-Perez,Yang Gao,Ekaterina Ponizovskaya Devine,Soroush Ghandiparsi,Kazim G. Polat,Hasina H. Mamtaz,Toshishige Yamada,Aly F. Elrefaie,Shih-Yuan Wang,M. Saif Islam +10 more
TL;DR: In this article, a high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency is demonstrated with photon-trapping microhole features.
Journal ArticleDOI
High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication
Mark Triplett,Hideki Nishimura,Matthew Ombaba,V. J. Logeeswarren,Matthew F. Yee,Kazim G. Polat,Jin Y. Oh,Takashi Fuyuki,François Léonard,M. Saif Islam +9 more
TL;DR: In this article, a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion is presented.
Book ChapterDOI
Nanowire enabled photodetection
TL;DR: The physics and technology of nanowire (NW) photodetectors offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics and emerging negative index metamaterials based devices as discussed by the authors.
Proceedings ArticleDOI
Efficient Si photovoltaic devices with integrated micro/nano holes
Hilal Cansizoglu,Yang Gao,Ahmet Kaya,Soroush Ghandiparsi,Kazim G. Polat,Yichuan Wang,Runzhou Zhang,Hind Reggad,Ahmed S. Mayet,Ekaterina Ponizovskaya Devine,M. Saif Islam +10 more
TL;DR: In this article, a hole-based thin crystalline Si photovoltaic device with enhanced open circuit voltage and short circuit current was demonstrated after a successful surface passivation process through a wet oxidation.