Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

/pdf/the-missing-memristor-found-55upit5xe7.pdf

The missing memristor found

I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Inspired by the brain’s structure, we have developed an efficient, scalable, and flexible non–von Neumann architecture that leverages contemporary silicon technology. To demonstrate, we built a 5.4-billion-transistor chip with 4096 neurosynaptic cores interconnected via an intrachip network that integrates 1 million programmable spiking neurons and 256 million configurable synapses. Chips can be tiled in two dimensions via an interchip communication interface, seamlessly scaling the architecture to a cortexlike sheet of arbitrary size. The architecture is well suited to many applications that use complex neural networks in real time, for example, multiobject detection and classification. With 400-pixel-by-240-pixel video input at 30 frames per second, the chip consumes 63 milliwatts.

A million spiking-neuron integrated circuit with a scalable communication network and interface

Nano-sized inverted domain dots in ferroelectric materials is a technology with potential applications in ultrahigh-density rewritable data storage systems. Up to now, we have studied domain inversion characteristics of stoichiometric and congruent LiTaO 3 single crystals in nanoscopic area using scanning nonlinear dielectric microscopy (SNDM), which is the technique for observing ferroelectric polarization distribution with sub-nanometer resolution. In this study, we have revealed nano-sized inverted domain remained stably for a long time, and successfully formed inverted domain dots at a data density of 1.50 Tbit/inch 2 , representing the highest memory density for rewritable electric data storage reported to date.

Tbit/Inch 2 Data Storage Using Scanning Nonlinear Dielectric Microscopy

Solid state ionics is a field that elucidates and applies the phenomena of ion transport in solids, in contrast to electronics which elucidates and applies the phenomena to electron transport. In recent years, unique functional solid state ionics devices have been developed for information and communication equipment, using not only solid electrolyte but also mixed conductors that transport ions and electrons in solids, and the fused field of solid state ionics devices and electronics devices is gaining importance. Herein we provide an overview of solid state ionics and various solid state ionics devices that have been developed to date, with emphasis on recently introduced solid state ionics devices made of solid electrolytes and mixed conductors. Such devices are expected to be indispensable for the future development of information and communication equipment, especially in relation to artificial intelligence, where electronic devices have been predominant.

https://iopscience.iop.org/article/10.35848/1347-4065/ac64e5/pdf

Solid state ionics for the development of artificial intelligence components

https://iopscience.iop.org/article/10.7567/1347-4065/ab09cf/pdf

Oxide ion and proton conduction controlled in nano-grained yttria stabilized ZrO2 thin films prepared by pulse laser deposition

The goal of treating rheumatoid arthritis (RA) should be remission, for which a new definition was pro- posed in 2011. To determine which patients can achieve the new Boolean-based definition of remission in clinical practice, we analyzed factors associated with remission in 123 patients who received tocilizumab for 52 weeks. We found that patients with short disease duration (\4.8 years) had a significantly higher rate of remission (31.7%) than those with longer disease duration, and patient global assessment was the most important factor for achieving remission. Multivariate analysis revealed the following predictors of remission: short disease duration (\4.8 years; odds ratio (OR) 2.5, 95% confidence interval (CI) 1.4-4.7) and lower disease activity (28-joint disease activity score- erythrocyte sedimentation rate (DAS28-ESR) \5.23; OR 2.5, 95% CI 1.2-5.1). In this study, we showed that remission, as newly defined using a Boolean approach, is a realistic goal for patients treated with tocilizumab with short disease duration in real-world clinical practice.

Early aggressive intervention with tocilizumab for rheumatoid arthritis increases remission rate defined using a Boolean approach in clinical practice Toshihisa KojimaAtsushi KanekoYuji HiranoHisato IshikawaHiroyuki MiyakeHideki Takagi • Yuichiro YabeTakefumi KatoKenya TerabeNaoki FukayaHiroki TsuchiyaTomone Shioura • Koji FunahashiMasatoshi HayashiDaizo KatoHiroyuki MatsubaraNaoki Ishiguro

Kazuya Terabe

Papers

Tbit/Inch 2 Data Storage Using Scanning Nonlinear Dielectric Microscopy

Solid state ionics for the development of artificial intelligence components

Oxide ion and proton conduction controlled in nano-grained yttria stabilized ZrO2 thin films prepared by pulse laser deposition

Development of Quantized Conductance Atomic Switch