Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

/pdf/the-missing-memristor-found-55upit5xe7.pdf

The missing memristor found

I have developed "tennis elbow" from lugging this book around the past four weeks, but it is worth the pain, the effort, and the aspirin. It is also worth the (relatively speaking) bargain price. Including appendixes, this book contains 894 pages of text. The entire panorama of the neural sciences is surveyed and examined, and it is comprehensive in its scope, from genomes to social behaviors. The editors explicitly state that the book is designed as "an introductory text for students of biology, behavior, and medicine," but it is hard to imagine any audience, interested in any fragment of neuroscience at any level of sophistication, that would not enjoy this book. The editors have done a masterful job of weaving together the biologic, the behavioral, and the clinical sciences into a single tapestry in which everyone from the molecular biologist to the practicing psychiatrist can find and appreciate his or

Principles of Neural Science

Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

http://chialvo.org/Curso/UBACurso/DIA7/Papers/Aono_NatMat_07_Ionic%20Switching%20Memory.pdf

Nanoionics-based resistive switching memories

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Inspired by the brain’s structure, we have developed an efficient, scalable, and flexible non–von Neumann architecture that leverages contemporary silicon technology. To demonstrate, we built a 5.4-billion-transistor chip with 4096 neurosynaptic cores interconnected via an intrachip network that integrates 1 million programmable spiking neurons and 256 million configurable synapses. Chips can be tiled in two dimensions via an interchip communication interface, seamlessly scaling the architecture to a cortexlike sheet of arbitrary size. The architecture is well suited to many applications that use complex neural networks in real time, for example, multiobject detection and classification. With 400-pixel-by-240-pixel video input at 30 frames per second, the chip consumes 63 milliwatts.

A million spiking-neuron integrated circuit with a scalable communication network and interface

Scanning force microscopy is used to investigate microscale ferroelectric domains at the +Z surface of near-stoichiometric lithium tantalate (SLT) single crystals. Both line and lattice patterns of microdomains are fabricated at the +Z surface of SLT wafers, which are switched by scanning these wafers with the external field exceeding the coercive field. The +Z polar surface in these patterns is etched by a mixture of acid aqueous solution (HF : HNO3 = 1 : 1), which reveals the precise microdomain structure. The analysis of the experimental data indicates that the rearrangement of the ferroelectric domain structure occurs during the chemical etching process; the effect of both defect and crystal structure on the microdomain growth process is also discussed. The present results are helpful for us to realize the fabrication of the expected microdomain morphology.

Fabrication of microdomains at the +Z surface of near-stoichiometric lithium tantalate crystals

Scanning Nonlinear Dielectric Microscopy (SNDM) is the method for observing ferroelectric polarization distribution, and now, its resolution has become to the sub-nanometer order, which is much higher than other scanning probe microscopy (SPM) methods for the same purpose. Up to now, we have studied high-density ferroelectric data storage using this microscopy. In this study, we have conducted fundamental experiments of nano-sized inverted domain formation in LiTaO3 single, and successfully formed inverted dot array with the density of 1.5 Tbit/inch2.

Basic Study on High-density Ferroelectric Data Storage Using Scanning Nonlinear Dielectric Microscopy

A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.

Switching element and application of the same

https://iopscience.iop.org/article/10.35848/1347-4065/ab7e12/pdf

Oxygen-tolerant operation of all-solid-state ionic-gating devices: advantage of all-solid-state structure for ionic-gating

https://iopscience.iop.org/article/10.35848/1347-4065/ab740e/pdf

Kazuya Terabe

Papers

Fabrication of microdomains at the +Z surface of near-stoichiometric lithium tantalate crystals

Basic Study on High-density Ferroelectric Data Storage Using Scanning Nonlinear Dielectric Microscopy

Switching element and application of the same

Oxygen-tolerant operation of all-solid-state ionic-gating devices: advantage of all-solid-state structure for ionic-gating

A graphene oxide-based ionic decision-maker for simple fabrication and stable operation